Characterizing Defects Responsible for Charge Transport Characteristics at Interfaces of Nano-Thick Materials Stacks

  • Gennadi Bersuker
  • Matthew B. Watkins
  • Alexander L. Shluger
Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 234)

Abstract

Major functioning blocks in modern devices employed in a variety of applications (electronics, energy harvesting, sensors, etc.) comprise of stacks of nm-thin layers of dielectric materials in contact with conductive electrodes (semiconductors, metals). The performance and reliability of these devices are affected by charge transfer characteristics of these multilayer stacks. We discuss collaboration between electrical measurements and computational modeling leading to identification of defects responsible for degradation phenomena in nm-thin dielectric films employed as gate dielectrics in metal oxide field effect transistors.

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Copyright information

© Springer International Publishing Switzerland 2016

Authors and Affiliations

  • Gennadi Bersuker
    • 1
  • Matthew B. Watkins
    • 2
    • 3
  • Alexander L. Shluger
    • 3
  1. 1.The Aerospace CorporationLos AngelesUSA
  2. 2.School of Mathematics and PhysicsUniversity of LincolnBrayford PoolUK
  3. 3.Department of Physics and AstronomyUniversity College LondonLondonUK

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