Abstract
The capability of new technologies, such as oxide thin-film transistors (TFTs) is reinforced when they are successfully integrated in circuits or systems with a considerable level of complexity. In the particular case of this study, sputtered indium-gallium-zinc oxide (IGZO) TFTs are used to design, simulate and produce an analog-to-digital converter (ADC), demonstrating the potential of this technology namely in terms of lower processing temperature and costs and excellent performance, typically far superior to a-Si and organics and comparable to LTPS.
In this chapter, the optimized IGZO TFTs with multilayer and multicomponent dielectric, based on Ta2O5 and SiO2, are used to design a sigma-delta (\( \Sigma \Delta \)) modulator (\( \Sigma \Delta M \)), with a particular attention to the comparator, the active block in the circuit. The circuits are simulated using commercial electronic design automation (EDA) tools, which will be briefly referred. Furthermore, some layout considerations and hints for a successful fabrication are also provided.
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In this simulation, the length of devices was sized to 10 μm since this image was obtained during re-design of comparator, to be integrated in \( \Sigma \Delta \) M.
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Correia, A., Barquinha, P.M.C., Goes, J. (2016). A Second-Order ΣΔ ADC with Oxide TFTs @ FCT-UNL. In: A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs. SpringerBriefs in Electrical and Computer Engineering. Springer, Cham. https://doi.org/10.1007/978-3-319-27192-7_5
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DOI: https://doi.org/10.1007/978-3-319-27192-7_5
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