Abstract
Oxide thin-film transistors (TFTs) optimization is imperative in order to obtain a successful integration of circuits. In fact, parameters as turn-on voltage (Von) or gate leakage current (IG) are known to influence circuit characteristics. These parameters are greatly affected by the properties of the dielectric layer and its interface with the semiconductor. Therefore, amorphous high-κ dielectrics acquire an important role, especially in multicomponent single or multilayer structures, where materials with different electrical properties (e.g., high-κ and high bandgap energy, EG) are combined to acquire dielectrics with the best possible performance and reliability.
In this chapter a brief overview about fabrication of thin films and TFTs is provided. Then, it presents a detailed discussion on the characterization of sputtered amorphous multicomponent high-κ dielectrics based on Ta2O5 and SiO2, using single and multilayer structures, and their integration in indium-gallium-zinc oxide (IGZO) TFTs. Finally, an existing model for a-Si:H TFTs is adapted to IGZO TFTs technology.
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Notes
- 1.
It was previously shown that, under moderate substrate bias, improved compactness and better insulating properties are achieved, due to re-sputtering of weakly bonded species from the growing film (naturally, this effect is material dependent) [5].
- 2.
Negative masks were used for lift-off processes of all the layers, except dielectric patterning that required a positive mask for subsequent RIE process.
- 3.
In both dielectrics a peak at 2\(\theta = 46^{\circ }\) is visible and is due to the Pt foil (the heating element) where the sample is mounted.
- 4.
Seven layer structures were still not available when RBS analysis was performed but the five layer sample is perfectly suitable for the RBS comparisons envisaged here.
References
P. Barquinha, Transparent oxide thin-film transistors: production, characterization and integration. Ph.D. thesis, 2010
H.Q. Chiang, Development of oxide semiconductors: materials, devices, and integration. Ph.D. thesis, Oregon State University, 2007
A.H. Simon, Sputter processing, in Handbook of Thin Film Deposition, 3rd edn., ed. by K. Seshan (William Andrew Publishing, Oxford, 2012), pp. 55–88
R.C. Jaeger, Introduction to Microelectronic Fabrication (Addison-Wesley Longman Publishing, Boston, 1987)
P. Barquinha, R. Martins, L. Pereira, E. Fortunato, Transparent Oxide Electronics: From Materials to Devices (Wiley, Chichester, 2012)
D. Hess, Dry-etching processes, in Microelectronic Materials and Processes, ed. by R.A. Levy (Springer Netherlands, Dordrecht, 1989)
K. Nojiri, Dry Etching Technology for Semiconductors (Springer International Publishing, Cham, 2015)
H. Stanjek, W. Häusler, Basics of X-ray diffraction. Hyperfine Interact. 154(1–4), 107–119 (2004)
C.R. Blanchard, Atomic force microscopy. Chem. Educ. 1(5), 1–8 (1996)
G. Binnig, C.F. Quate, C. Gerber, Atomic force microscope. Phys. Rev. Lett. 56(9), 930–933 (1986)
Y. Leng, Materials Characterization (Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, 2013)
N.P. Barradas, C. Jeynes, R.P. Webb, Simulated annealing analysis of Rutherford backscattering data. Appl. Phys. Lett. 71(2), 291 (1997)
W.-K. Chu, J.W. Mayer, M.-A. Nicolet, Backscattering Spectrometry (Academic, New York, 1978)
H. Fujiwara, Spectroscopic Ellipsometry (Wiley, Chichester, 2007)
D.K. Schroder, Semiconductor Material and Device Characterization (Wiley, Hoboken, 2005)
C. Chaneliere, S. Four, J. Autran, R. Devine, Comparison between the properties of amorphous and crystalline Ta2O5 thin films deposited on Si. Microelectron. Reliab. 39(2), 261–268 (1999)
P. Barquinha, A.M. Vila, G. GonÇalves, L. Pereira, R. Martins, J.R. Morante, E. Fortunato, Gallium-indium-zinc-oxide-based thin-film transistors: influence of the source/drain material. IEEE Trans. Electron Devices 55(4), 954–960 (2008)
J.F. Wager, Transparent electronics. Science 300(5623), 1245–1246 (2003)
L. Zhang, J. Li, X.W. Zhang, X.Y. Jiang, Z.L. Zhang, High-performance ZnO thin film transistors with sputtering SiO2/Ta2O5/SiO2 multilayer gate dielectric. Thin Solid Films 518(21), 6130–6133 (2010)
L. Zhang, H. Zhang, J.W. Ma, X.W. Zhang, X.Y. Jiang, Z.L. Zhang, Copper phthalocyanine thin-film field-effect transistor with SiO2/Ta2O5/SiO2 multilayer insulator. Thin Solid Films 518(21), 6134–6136 (2010)
D. Kang, H. Lim, C. Kim, I. Song, J. Park, Y. Park, J. Chung, Amorphous gallium indium zinc oxide thin film transistors: sensitive to oxygen molecules. Appl. Phys. Lett. 90(19), 192101 (2007)
G. Bahubalindruni, V.G. Tavares, P. Barquinha, C. Duarte, R. Martins, E. Fortunato, P.G. de Oliveira, Basic analog circuits with a-GIZO thin-film transistors: modeling and simulation, in 2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) (IEEE, New York, 2012), pp. 261–264
D.H. Kim, Y.W. Jeon, S. Kim, Y. Kim, Y.S. Yu, D.M. Kim, H.-I. Kwon, Physical parameter-based spice models for InGaZnO thin-film transistors applicable to process optimization and robust circuit design. IEEE Electron Device Lett. 33(1), 59–61 (2012)
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Correia, A., Barquinha, P.M.C., Goes, J. (2016). Oxide TFTs @ FCT-UNL. In: A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs. SpringerBriefs in Electrical and Computer Engineering. Springer, Cham. https://doi.org/10.1007/978-3-319-27192-7_3
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