Abstract
Oxide thin-film transistors (TFTs) optimization is imperative in order to obtain a successful integration of circuits. In fact, parameters as turn-on voltage (Von) or gate leakage current (IG) are known to influence circuit characteristics. These parameters are greatly affected by the properties of the dielectric layer and its interface with the semiconductor. Therefore, amorphous high-κ dielectrics acquire an important role, especially in multicomponent single or multilayer structures, where materials with different electrical properties (e.g., high-κ and high bandgap energy, EG) are combined to acquire dielectrics with the best possible performance and reliability.
In this chapter a brief overview about fabrication of thin films and TFTs is provided. Then, it presents a detailed discussion on the characterization of sputtered amorphous multicomponent high-κ dielectrics based on Ta2O5 and SiO2, using single and multilayer structures, and their integration in indium-gallium-zinc oxide (IGZO) TFTs. Finally, an existing model for a-Si:H TFTs is adapted to IGZO TFTs technology.
Keywords
- Atomic Force Microscopy
- Multilayer Structure
- Rutherford Backscattering Spectroscopy
- Substrate Bias
- Spectroscopic Ellipsometry
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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- 1.
It was previously shown that, under moderate substrate bias, improved compactness and better insulating properties are achieved, due to re-sputtering of weakly bonded species from the growing film (naturally, this effect is material dependent) [5].
- 2.
Negative masks were used for lift-off processes of all the layers, except dielectric patterning that required a positive mask for subsequent RIE process.
- 3.
In both dielectrics a peak at 2\(\theta = 46^{\circ }\) is visible and is due to the Pt foil (the heating element) where the sample is mounted.
- 4.
Seven layer structures were still not available when RBS analysis was performed but the five layer sample is perfectly suitable for the RBS comparisons envisaged here.
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Correia, A., Barquinha, P.M.C., Goes, J. (2016). Oxide TFTs @ FCT-UNL. In: A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs. SpringerBriefs in Electrical and Computer Engineering. Springer, Cham. https://doi.org/10.1007/978-3-319-27192-7_3
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