Abstract
Thin-film transistors (TFTs) are key elements for thin film electronics, being their most significant application the pixel switching elements on flat panel displays (FPDs). Semiconductor materials enabling faster TFTs, such as lowtemperature polycrystalline silicon (LTPS) or transparent semiconducting oxides (TSOs), hold the promise of expanding TFT application to gate and data drivers or even full systems-on-panel, for increased reliability and lower production costs.
This chapter is an introductory background and a concise historical perspective related to TFTs. Additionally, taking into account that the devices explored in this work use an oxide semiconductor (indium-gallium-zinc oxide, IGZO) and an high- › dielectric (based on Ta2O5 and SiO2), a brief overview and historical context regarding TSOs and high-› dielectrics is also provided.
Keywords
- Complementary Metal Oxide Semiconductor
- Metal Insulator Semiconductor
- Active Matrix Liquid Crystal Display
- Oxide TFTs
- Saturation Mobility
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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A.C. Tickle, Thin-Film Transistors: A New Approach to Microelectronics (Wiley, New York, 1969)
J.-H. Lee, S.-T. Wu, D.N. Liu, Introduction To Flat Panel Displays (Wiley, West Sussex, 2008), p. 280
R.L. Hoffman, B.J. Norris, J.F. Wager, ZnO-based transparent thin-film transistors. Appl. Phys. Lett. 82(5), 733 (2003)
P. Barquinha, Transparent oxide thin-film transistors: production, characterization and integration. Ph.D thesis, 2010
A. Facchetti, T.J. Marks (eds.), Transparent Electronics (Wiley, Chichester, 2010)
M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, H. von Wenckstern, Transparent semiconducting oxides: materials and devices. Phys. Status Solidi (a) 207(6), 1437–1449 (2010)
H.Q. Chiang, Development of oxide semiconductors: materials, devices, and integration. Ph.D thesis, Oregon State University, 2007
G. Boesen, J. Jacobs, ZnO field-effect transistor. Proc. IEEE 56(11), 2094–2095 (1968)
S. Masuda, K. Kitamura, Y. Okumura, S. Miyatake, H. Tabata, T. Kawai, Transparent thin film transistors using ZnO as an active channel layer and their electrical properties. J. Appl. Phys. 93(3), 1624–1630 (2003)
R.L. Hoffman, Zno-channel thin-film transistors: channel mobility. J. Appl. Phys. 95(10), 5813–5819 (2004)
P.F. Carcia, R.S. McLean, M.H. Reilly, G. Nunes, Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering. Appl. Phys. Lett. 82(7), 1117 (2003)
E.M.C. Fortunato, P.M.C. Barquinha, A.C.M.B.G. Pimentel, A.M.F. Goncalves, A.J.S. Marques, R.F.P. Martins, L.M. Pereira, Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature. Appl. Phys. Lett. 85(13), 2541 (2004)
K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor. Science, 300(5623), 1269–1272 (2003)
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432(7016), 488–492 (2004)
T. Kamiya, K. Nomura, H. Hosono, Present status of amorphous InGaZnO thin-film transistors. Sci. Technol. Adv. Mater. 11(4), 044305 (2010)
N.L. Dehuff, E.S. Kettenring, D. Hong, H.Q. Chiang, J.F. Wager, R.L. Hoffman, C.-H. Park, D.A. Keszler, Transparent thin-film transistors with zinc indium oxide channel layer. J. Appl. Phys. 97(6), 064505 (2005)
P. Barquinha, A. Pimentel, A. Marques, L. Pereira, R. Martins, E. Fortunato, Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide. J. Non Cryst. Solids 352(9–20), 1749–1752 (2006)
H. Hosono, K. Nomura, Y. Ogo, T. Uruga, T. Kamiya, Factors controlling electron transport properties in transparent amorphous oxide semiconductors. J. Non Cryst. Solids 354(19–25), 2796–2800 (2008)
D. Kang, I. Song, C. Kim, Y. Park, T.D. Kang, H.S. Lee, J.-W. Park, S.H. Baek, S.-H. Choi, H. Lee, Effect of ga in ratio on the optical and electrical properties of GaInZnO thin films grown on SiO/Si substrates. Appl. Phys. Lett. 91, 910 (2007)
P. Barquinha, L. Pereira, G. Goncalves, R. Martins, E. Fortunato, Toward high-performance amorphous GIZO TFTs. J. Electrochem. Soc. 156(3), H161 (2009)
E. Elangovan, K.J. Saji, S. Parthiban, G. Goncalves, P. Barquinha, R. Martins, E. Fortunato, Thin-film transistors based on indium molybdenum oxide semiconductor layers sputtered at room temperature. IEEE Electron Device Lett. 32(10), 1391–1393 (2011)
J Robertson, Interfaces and defects of high-k oxides on silicon. Solid State Electron. 49(3), 283–293 (2005)
J Robertson, B Falabretti, Band offsets of high k gate oxides on high mobility semiconductors. Mater. Sci. Eng. B 135(3), 267–271 (2006)
P. Barquinha, R. Martins, L. Pereira, E. Fortunato, Transparent Oxide Electronics: From Materials to Devices (Wiley, Chichester, 2012)
J.F. Wager, Transparent electronics. Science 300(5623), 1245–1246 (2003)
L. Zhang, J. Li, X.W. Zhang, X.Y. Jiang, Z.L. Zhang, High-performance ZnO thin film transistors with sputtering SiO2/Ta2O5/SiO2 multilayer gate dielectric. Thin Solid Films 518(21), 6130–6133 (2010)
L. Zhang, H. Zhang, J.W. Ma, X.W. Zhang, X.Y. Jiang, Z.L. Zhang, Copper phthalocyanine thin-film field-effect transistor with SiO2/Ta2O5/SiO2 multilayer insulator. Thin Solid Films 518(21), 6134–6136 (2010)
R.S. Chen, W. Zhou, M. Zhang, M. Wong, H.S. Kwok, Self-aligned top-gate InGaZnO thin film transistors using SiO2/Al2O3 stack gate dielectric. Thin Solid Films 548, 572–575 (2013)
L. Pereira, P. Barquinha, G. Gonçalves, E. Fortunato, R. Martins, Multicomponent dielectrics for oxide TFT, in Oxide-Based Materials and Devices III, ed. by F.H. Teherani, D.C. Look, D.J. Rogers. Proceedings of SPIE, vol. 8263 (2012), p. 826316. doi: 10.1117/12.909454. http://spie.org/Publications/Proceedings/Paper/10.1117/12.909454
C. Opoku, K.F. Hoettges, M.P. Hughes, V. Stolojan, S.R.P. Silva, M. Shkunov, Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric. Nanotechnology 24(40), 405203 (2013)
Y. Wang, S.W. Liu, X.W. Sun, J.L. Zhao, G.K.L. Goh, Q.V. Vu, H.Y. Yu, Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors. J. Sol-Gel Sci. Technol. 55(3), 322–327 (2010)
M.K. Ryu, K. Park, J.B. Seon, J. Park, I. Kee, Y. Lee, S.Y. Lee, in AMOLED Driven by Solution-Processed Oxide Semiconductor TFT, ed. by J. Morreale (Soc Information Display, Campbell, 2009)
K. Song, D. Kim, X.S. Li, T. Jun, Y. Jeong, J. Moon, Solution processed invisible all-oxide thin film transistors.J. Mater. Chem. 19(46), 8881–8886 (2009)
Y.-H. Yang, S. Yang, C.-Y. Kao, K.-S. Chou, Chemical and electrical properties of low-temperature solution-processed InGaZn-O thin-film transistors. IEEE Electron Device Lett. 31(4), 329–331 (2010)
K.K. Banger, Y. Yamashita, K. Mori, R.L. Peterson, T. Leedham, J. Rickard, H. Sirringhaus, Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a sol–gel on chip process. Nat. Mater. 10(1), 45–50 (2011)
M.-G. Kim, M.G. Kanatzidis, A. Facchetti, T.J. Marks, Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing. Nat. Mater. 10(5), 382–388 (2011)
R. Martins, V. Figueiredo, R. Barros, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, E. Fortunato, P-type oxide-based thin film transistors produced at low temperatures, in Oxide-based Materials and Devices III, ed. by F.H. Teherani, D.C. Look, D.J. Rogers. Proceedings of SPIE, vol. 8263 (2012), p. 826315. doi: 10.1117/12.907387. http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1386306
B.K. Meyer, A. Polity, D. Reppin, M. Becker, P. Hering, P.J. Klar, T. Sander, C. Reindl, J. Benz, M. Eickhoff, C. Heiliger, M. Heinemann, J. Bläsing, A. Krost, S. Shokovets, C. Müller, C. Ronning, Binary copper oxide semiconductors: from materials towards devices. Phys. Status Solidi B 249(8), 1487–1509 (2012)
R. Martins, A. Nathan, R. Barros, L. Pereira, P. Barquinha, N. Correia, R. Costa, A. Ahnood, I. Ferreira, E. Fortunato, Complementary metal oxide semiconductor technology with and on paper. Adv. Mater. 23(39), 4491–4496 (2011)
R.F.P. Martins, A. Ahnood, N. Correia, L.M.N.P. Pereira, R. Barros, P.M.C.B. Barquinha, R. Costa, I.M.M. Ferreira, A. Nathan, E.E.M.C. Fortunato, Recyclable, flexible, low-power oxide electronics. Adv. Funct. Mater. 23(17), 2153–2161 (2013)
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Correia, A., Barquinha, P.M.C., Goes, J. (2016). Thin-Film Transistors. In: A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs. SpringerBriefs in Electrical and Computer Engineering. Springer, Cham. https://doi.org/10.1007/978-3-319-27192-7_2
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DOI: https://doi.org/10.1007/978-3-319-27192-7_2
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