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Recombination

  • Marius GrundmannEmail author
Chapter
Part of the Graduate Texts in Physics book series (GTP)

Abstract

The various mechanisms and statistics of carrier recombination in semiconductors including band-band, excitonic, band-impurity (Shockley–Read–Hall kinetics) and Auger recombination are explained. Also recombination at extended defects and surfaces is treated. Using the diffusion-recombination theory, the one-dimensional carrier profiles for typical situations in experiments and devices are derived.

Keywords

Recombination Rate Auger Recombination Minority Carrier Lifetime Electron Beam Induce Current Phonon Replica 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Copyright information

© Springer International Publishing Switzerland 2016

Authors and Affiliations

  1. 1.Institut für Experimentelle Physik IIUniversität LeipzigLeipzigGermany

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