The various mechanisms and statistics of carrier recombination in semiconductors including band-band, excitonic, band-impurity (Shockley–Read–Hall kinetics) and Auger recombination are explained. Also recombination at extended defects and surfaces is treated. Using the diffusion-recombination theory, the one-dimensional carrier profiles for typical situations in experiments and devices are derived.
Recombination Rate Auger Recombination Minority Carrier Lifetime Electron Beam Induce Current Phonon Replica
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