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The Origin of Defects Induced in Ultra-Pure Germanium by Electron Beam Deposition

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Quodons in Mica

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 221))

Abstract

The creation of point defects in the crystal lattices of various semiconductors by subthreshold events has been reported on by a number of groups. These observations have been made in great detail using sensitive electrical techniques but there is still much that needs to be clarified. Experiments using Ge and Si were performed that demonstrate that energetic particles, the products of collisions in the electron beam, were responsible for the majority of electron-beam deposition (EBD) induced defects in a two-step energy transfer process. Lowering the number of collisions of these energetic particles with the semiconductor during metal deposition was accomplished using a combination of static shields and superior vacuum resulting in devices with defect concentrations lower than \( 10^{11}\) cm\(^{-3}\), the measurement limit of our deep level transient spectroscopy (DLTS) system. High energy electrons and photons that samples are typically exposed to were not influenced by the shields as most of these particles originate at the metal target thus eliminating these particles as possible damage causing agents. It remains unclear how packets of energy that can sometimes be as small of 2 eV travel up to a \(\upmu \)m into the material while still retaining enough energy, that is, in the order of 1 eV, to cause changes in the crystal. The manipulation of this defect causing phenomenon may hold the key to developing defect free material for future applications.

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Acknowledgments

This project has been financed by the South African National Research Foundation. J.F.R.A. acknowledges financial support from the project FIS2008-04848 from Ministerio de Ciencia e Innovación (MICINN).

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Authors and Affiliations

  1. Department of Physics, University of Pretoria, Lynnwood Road, Pretoria, 0002, South Africa

    Sergio M. M. Coelho, F. Danie Auret & Jackie M. Nel

  2. Group of Nonlinear Physics, Departamento de Física Aplicada I, Universidad de Sevilla, Avda Reina Mercedes S/n, 41012, Sevilla, Spain

    Juan F. R. Archilla

Authors
  1. Sergio M. M. Coelho
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  2. Juan F. R. Archilla
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  3. F. Danie Auret
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  4. Jackie M. Nel
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Corresponding author

Correspondence to Sergio M. M. Coelho .

Editor information

Editors and Affiliations

  1. Departamento de Física Aplicada I, Group of Nonlinear Physics, Universidad de Sevilla, Sevilla, Spain

    Juan F. R. Archilla

  2. Física Aplicada, EPS Gandía, Universidad Politécnica de Valencia, Gandia, Spain

    Noé Jiménez

  3. Física Aplicada, EPS Gandia, Universidad Politécnica de Valencia, Gandia, Spain

    Victor J. Sánchez-Morcillo

  4. Matemática Aplicada, Universidad Politécnica de Valencia, Valencia, Spain

    Luis M. García-Raffi

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Coelho, S.M.M., Archilla, J.F.R., Auret, F.D., Nel, J.M. (2015). The Origin of Defects Induced in Ultra-Pure Germanium by Electron Beam Deposition. In: Archilla, J., Jiménez, N., Sánchez-Morcillo, V., García-Raffi, L. (eds) Quodons in Mica. Springer Series in Materials Science, vol 221. Springer, Cham. https://doi.org/10.1007/978-3-319-21045-2_15

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