The DR in Accumulation and Inversion Layers of Non-parabolic Semiconductors

Abstract

In this chapter, we study the DR in accumulation and inversion layers of HD non-linear optical, III–V, II–VI, IV–VI and stressed semiconductors. The most striking features are that the presence of poles in the DR of the materials in the absence of band tail creates the complex energy spectrum in the corresponding HD samples and effective electron mass exists within the band gap which is impossible without the concept of band tails. In the absence of band-tails, the imaginary part vanishes. The 2D electrons in accumulation and inversion layers ($A_{0}$) are the quantized circles and ellipses in both real and complex planes respectively and the Sect. 6.4 contains 12 open research problems which is the integral part of this chapter.

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