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Semiconductor Growth Techniques and Device Fabrication

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Advanced Semiconducting Materials and Devices

Part of the book series: Engineering Materials ((ENG.MAT.))

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Abstract

This chapter presents a brief outline of the technology associated with semiconductor processing. The production of highly pure electronic-grade silicon from raw feedstock is presented. Different techniques of semiconductor crystal growth are given. Czochralski (CZ) method and Bridgman method are explained. Zone refining process is also described. Semiconductor fabrication technology, and thin film micro-electronic circuit fabrication are presented. Preparation of wafers, epitaxy, masking, photolithography, interconnection by metalizing are discussed. Methods of ion-implantation, molecular beam epitaxy (MBE), sputtering and etching are explained. Semiconductor p–n junction (diode) formed by different methods, are described. Stepwise procedure for the formation of a semiconductor p–n junction, and transistor manufacturing processes (of grown junction, alloy formation, diffusion) are briefly narrated. Minute insight into the various topics are given through solved numerical and theoretical examples. Review questions, numerical problems and objective type questions are also given with their answers.

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Notes

  1. 1.

    1 ppb = 1 part per billion.

References

  1. Gupta, K.M., Gupta, N.: Advanced electrical and electronics materials. Scrivener Wiley Publishing, USA (2015)

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  2. Tyagi, M.S.: Introduction to semiconductor materials and devices. Wiley India Pvt. Ltd., Delhi (2008). (Reprint)

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  3. http://cnx.org/contents/bbe0373c-eb45-4d40-8abd-3e6e077547c3@2/Electronic-Grade-Gallium-Arsen

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Correspondence to K. M. Gupta .

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Gupta, K.M., Gupta, N. (2016). Semiconductor Growth Techniques and Device Fabrication. In: Advanced Semiconducting Materials and Devices. Engineering Materials. Springer, Cham. https://doi.org/10.1007/978-3-319-19758-6_13

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