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Possibility of Recombination Gain Increase in CV Ions at 4.0 nm Via Coherence

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X-Ray Lasers 2014

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 169))

Abstract

This paper is about the recent experimental results on amplification of the CV line in the “water window” at 4.03 nm from resonance transition to the ground level of He-like ions in recombination scheme. The indication of the amplification of the CV line has been observed when an elongated narrow plasma channel was created, where high intensity 100 fs beams, optimal for creating CV ions in high density plasma, was propagated up to 0.5–0.6 mm. Without channeling the effective plasma length was much shorter and there was no indication of amplification.The large interest in gain generation in He-like ions in the transition to ground state is due to the possibility of applying a recently developed theory of Lasing Without Inversion (LWI) in XUV and X-ray regions to largely increase the gain for such transitions. The presented results of the indication of CV line amplifications are being discussed from the point of view of using LWI as a superradiance gain increase, hence to construct a very compact soft X-ray laser in the “water window”.The last part of the paper is related to the application of the ultra-intensive fs plasma laser, which is currently in the process of development by using stimulated Raman backscattering (SRBS) to create a plasma amplifier and compressor, as the pump for compact laser operating in the “water window” and also at shorter wavelengths.

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Acknowledgements

We are thankful to Q.Chen and N.Tkach for their help with the experiments. The research was supported by NSF/Phys Grant 1068554, NSF/DOE Grant 1064465 and DOE/NNSA Grant DE-FOA-0000611

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Correspondence to S. Suckewer .

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Luo, Y. et al. (2016). Possibility of Recombination Gain Increase in CV Ions at 4.0 nm Via Coherence. In: Rocca, J., Menoni, C., Marconi, M. (eds) X-Ray Lasers 2014. Springer Proceedings in Physics, vol 169. Springer, Cham. https://doi.org/10.1007/978-3-319-19521-6_3

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