Abstract
Thanks to the technology scaling, the cut-off frequencies of MOS transistors reach an f T of 250 GHz and f MAX of 300 GHz in 40-nm CMOS technology. On top of offering high-speed transistors, the advanced CMOS technology usually provides several RF and mm-Wave friendly options, such as thick top metals and the silicon substrate with resistivity of 10 \(\Omega\) cm . All these features enable the integration of the complete mm-Wave system on a single CMOS die.
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Notes
- 1.
The bias current density that gives the peak f T or f MAX in this technology is above 0.2 mA/μm. A current density of 0.1 mA/μm is chosen in the PA designs of this work for high PA efficiency.
- 2.
Different RC extraction tools have been used in this design, including Synopsys Star-RCXT and Mentor Graphics Calibre PEX.
- 3.
Vias are merged in EM simulations to reduce the simulation time.
- 4.
As 1 neper (Np) corresponds to a power ratio of e 2, the conversion between nepers and decibels is 1 NP \(= 10\log e^{2} =\) 8.686 dB.
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Zhao, D., Reynaert, P. (2015). mm-Wave Active and Passive Devices. In: CMOS 60-GHz and E-band Power Amplifiers and Transmitters. Analog Circuits and Signal Processing. Springer, Cham. https://doi.org/10.1007/978-3-319-18839-3_3
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