Abstract
Two types of diffusion barriers, Ta-based and TiW-based, with Ni layer on top were investigated to determine their reliability for high temperature applications up to 600 °C. Both barriers were deposited in form of stacked layer on 200 mm silicon wafers using standard production tools for physical vapor deposition. In order to investigate their reliability, the barriers have been annealed inside a vacuum chamber for 24 h up to 600 °C. Before and after annealing, three ex situ analysis techniques consisting X-ray diffraction method, 4-probe measurement method, and transmission electron microscopy (TEM) have been applied. After annealing for 24 h at 600 °C, Ni–Ta and Ni–TiW phases from Ta- and TiW-based barriers, respectively, were determined and both barriers showed a tolerable increase of sheet resistance. TEM analysis determined no diffusion of materials into the substrate using both barriers and this result was confirmed by XRD analysis.
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Acknowledgments
This investigation was supported by The Federal Ministry of Education and Research of Federal Republic of Germany, SiEGeN project, (BMBF, Grant No. 03X3546). The author would like to thank the people at CAU-Kiel (M. Manzoor, A. Malave, A. Petraru, C. Szillus, A. Priora, T. Metzing) and the people at Fraunhofer ISiT (J. Hagge, S. Käselau, M. Rickers, G. Nilson, F. Sörensen, Dr. L.-M. Buchmann, C. Eisermann, K. Reiter, B. Karsten, A. Ambrosius, D. Frank, B. Engel, K. Jung, D. Freidenberg, W. Prigandt, M. Witt, M. Claus).
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Budhiman, N., Schürmann, U., Jensen, B., Chemnitz, S., Kienle, L., Wagner, B. (2015). High Temperature Reliability of Ta-Based and TiW-Based Diffusion Barriers. In: Polychroniadis, E., Oral, A., Ozer, M. (eds) 2nd International Multidisciplinary Microscopy and Microanalysis Congress. Springer Proceedings in Physics, vol 164. Springer, Cham. https://doi.org/10.1007/978-3-319-16919-4_22
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DOI: https://doi.org/10.1007/978-3-319-16919-4_22
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