Abstract
The widespread use of phase change materials in storage media is based on the extremely rapid and reversible switching between the amorphous and crystalline phases of some families of semiconducting alloys. Detailed information about the structure of the amorphous phase and the mechanism of crystallization are essential for the development of new storage media, and we study both aspects here using density functional/molecular dynamics simulations of \({\mathrm{Ge}_2}{\mathrm{Sb}_2}{\mathrm{Te}_5}\), the prototype phase change material of the Ge/Sb/Te semiconductor family.
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Acknowledgments
We thank all colleagues who worked with us on these problems, particularly K. Kobayashi, S. Kohara, J. Larrucea, T. Matsunaga, and N. Yamada. J.A. thanks the Academy of Finland for support. We acknowledge gratefully the computer time provided by the JARA-HPC Vergabegremium on the JARA-HPC partition of the supercomputer JUQUEEN at the Forschungszentrum Jülich, and for time granted on the supercomputer JUROPA at Jülich Supercomputer Centre. The German Research School for Simulation Sciences is a joint venture of the FZ Jülich and the RWTH Aachen University.
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Akola, J., Kalikka, J., Jones, R.O. (2015). The Prototype Phase Change Material \({\mathrm{Ge}_2}{\mathrm{Sb}_2}{\mathrm{Te}_5}\): Amorphous Structure and Crystallization. In: Massobrio, C., Du, J., Bernasconi, M., Salmon, P. (eds) Molecular Dynamics Simulations of Disordered Materials. Springer Series in Materials Science, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-15675-0_17
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