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PECVD Synthesis of Vertically-Oriented Graphene: Precursor and Temperature Effects

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Abstract

The plasma-enhanced chemical vapor deposition (PECVD) is an effective method for producing vertically-oriented graphene (VG) sheets, but it is also a very complex one because of the complexity associated with the plasma chemistry. In addition to the type of plasma sources discussed in Chap. 3, the morphology and structure of the PECVD-produced VG sheets are also strongly affected by a set of operating parameters, including precursors (e.g., feedstock gas type and composition, plasma gas type), the substrate temperature, and the operating pressure. In this chapter, we discuss two important operating parameters for the synthesis of VG in the PECVD process, specifically precursor and temperature.

Part of this chapter was adapted from our review article “Plasma-Enhanced Chemical Vapor Deposition Synthesis of Vertically-Oriented Graphene Nanosheets,” Nanoscale 5(12), 5180–5204, 2013 (DOI: 10.1039/C3NR33449J)—Reproduced by permission of The Royal Society of Chemistry.

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Author information

Authors and Affiliations

  1. Department of Mechanical Engineering, Department of Materials Science and Engineering, University of Wisconsin-Milwaukee, Milwaukee, WI, USA

    Junhong Chen

  2. State Key Laboratory of Clean Energy Utilization, College of Energy Engineering, Zhejiang University, Hangzhou, Zhejiang, China

    Zheng Bo

  3. Department of Mechanical Engineering, University of Alaska Anchorage, Anchorage, AK, USA

    Ganhua Lu

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  1. Junhong Chen
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  2. Zheng Bo
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  3. Ganhua Lu
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Correspondence to Junhong Chen .

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Chen, J., Bo, Z., Lu, G. (2015). PECVD Synthesis of Vertically-Oriented Graphene: Precursor and Temperature Effects. In: Vertically-Oriented Graphene. Springer, Cham. https://doi.org/10.1007/978-3-319-15302-5_4

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