Abstract
This chapter explores the EP from QW, NW and QB of HD optoelectronic materials. The EP from the said structures changes with degeneracy, wave length, nano thickness and intensity in different manners which are totally band structure dependent. This chapter contains 43 open research problems.
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Reference
K. P. Ghatak, S. Bhattacharya, D. De, Einstein Relation in Compound Semiconductors and their nanostructures. Springer Series in Materials Science, vol. 116 (Springer, Germany, 2008) (and the references cited therein)
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Ghatak, K.P. (2015). The EP from QWs, NWs and QBs of HD Optoelectronic Materials. In: Einstein's Photoemission. Springer Tracts in Modern Physics, vol 262. Springer, Cham. https://doi.org/10.1007/978-3-319-11188-9_7
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DOI: https://doi.org/10.1007/978-3-319-11188-9_7
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Publisher Name: Springer, Cham
Print ISBN: 978-3-319-11187-2
Online ISBN: 978-3-319-11188-9
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