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GaP/Si: Studying Semiconductor Growth Characteristics with Realistic Quantum-Chemical Models

  • Andreas Stegmüller
  • Ralf TonnerEmail author
Conference paper

Abstract

The understanding of microscopic processes and properties is crucial for the development and efficient production of inorganic III/V semiconductor materials. Those materials are grown in chemical vapour deposition procedures where elementary steps have not yet been thoroughly understood. Ab initio calculations are capable to investigate those atomic and electronic properties. Modern implementations of Density Functional Theory were applied to study layered bulk structures, periodic surface properties and adatom transport on Si(001) and GaP-Si(001) materials. By increasing cell sizes and number of atoms to scales that only supercomputing facilities can handle, a realistic chemical environment can be modeled with increased structural degrees of freedom. Bulk supercells were constructed in order to model realistic interfaces between two thin films in the nanometer scale. Supercell models in slab geometry were set up and converged with respect to the volume of vacuum and number of relaxed atoms for an accurate description of slab surfaces. These studies enable a direct comparison to experimental studies on these materials.

Keywords

Density Functional Theory Surface Reconstruction Vacuum Region Hessian Matrice Kinetic Monte Carlo Simulation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

The authors acknowledge the collaborative research training group (Graduiertenkolleg, DFG) 1782 “Functionalization of Semiconductors” as well as the Beilstein Institut, Frankfurt am Main, for financial and further support.

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Copyright information

© Springer International Publishing Switzerland 2015

Authors and Affiliations

  1. 1.Fachbereich ChemiePhilipps-Universität MarburgMarburgGermany

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