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Correlation Between Structural and Sensing Properties of Carbon Nanotube-Based Devices

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Sensors

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 319))

Abstract

In this work we report the development of back-gated carbon nanotubes field-effect transistors (CNT-FET) and their electrical characterization for sensing applications. Different kinds of CNTs (MWCNTs produced by different techniques and SWCNT) have been used as channel layer in the FET structure and this allows the investigation of the role of defects on the sensing properties of the devices. In particular, defects due to the growth process or induced by chemical treatment on the CNT walls have been investigated.

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Acknowledgments

The authors acknowledge S. Di Franco for technical support in optical lithography. This work has been funded by MIUR by means of the national Program PON R&C 2007–2013, project “Hyppocrates—Sviluppo di Micro e Nano-Tecnologie e Sistemi Avanzati per la Salute dell’uomo” (PON02 00355)

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Correspondence to S. Baldo .

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Baldo, S. et al. (2015). Correlation Between Structural and Sensing Properties of Carbon Nanotube-Based Devices. In: Compagnone, D., Baldini, F., Di Natale, C., Betta, G., Siciliano, P. (eds) Sensors. Lecture Notes in Electrical Engineering, vol 319. Springer, Cham. https://doi.org/10.1007/978-3-319-09617-9_37

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  • DOI: https://doi.org/10.1007/978-3-319-09617-9_37

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-09616-2

  • Online ISBN: 978-3-319-09617-9

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