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Circuit Reliability: Hot-Carrier Stress of MOS Transistors in Different Fields of Application

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Hot Carrier Degradation in Semiconductor Devices

Abstract

This work classifies hot-carrier stress (HCS) and negative- & positive-bias temperature instability (N/PBTI) in the larger context of circuit and product aging. The area of conflict regarding the importance of HCS and N/PBTI will be evaluated. Different fields of applications will be discussed. Some typical examples will illuminate in each case if one damage mechanism dominates the degradation. The root cause for the occurring proportion of HCS and N/PTBI will be explained. Specific characteristics of applications, circuits, and operation conditions leading to an outbalance of HCS or N/PBTI will be examined. Finally, this chapter will evaluate if a general trend for a dominating MOSFET degradation mechanism is observable.

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Authors and Affiliations

  1. Infineon Technologies AG, Am Campeon 1-12, 85579, Neubiberg, Germany

    Christian Schlünder

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  1. Christian Schlünder
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Correspondence to Christian Schlünder .

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  1. Institute for Microelectronics, Vienna University of Technology, Wien, Austria

    Tibor Grasser

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Schlünder, C. (2015). Circuit Reliability: Hot-Carrier Stress of MOS Transistors in Different Fields of Application. In: Grasser, T. (eds) Hot Carrier Degradation in Semiconductor Devices. Springer, Cham. https://doi.org/10.1007/978-3-319-08994-2_15

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  • DOI: https://doi.org/10.1007/978-3-319-08994-2_15

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