Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-Based Silicon Spin FETs

  • Dmitri OsintsevEmail author
  • Viktor Sverdlov
  • Siegfried Selberherr
Part of the Engineering Materials book series (ENG.MAT.)


In this chapter we investigate spin relaxation in thin silicon films. We employ a k·p based approach to investigate surface roughness and phonon induced momentum and spin relaxation matrix elements. We show that the spin relaxation matrix elements strongly decrease with shear strain increased. In order to meet computational requirements with actual resources needed for relaxation time calculations, we demonstrate a way to find the subband wave function from the k·p model analytically. We consider the impact of the surface roughness and phonons on transport and spin characteristics in ultra-thin SOI MOSFET devices. We show that the regions in the momentum space responsible for strong spin relaxation can be efficiently removed by applying uniaxial shear strain. The spin lifetime in strained films can be improved by orders of magnitude.


Shear Strain Spin Relaxation Acoustic Phonon Silicon Film Thin Silicon Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



This work is supported by the European Research Council through the grant #247056 MOSILSPIN. The computational results have been achieved using the Vienna Scientific Cluster (VSC).


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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Dmitri Osintsev
    • 1
    Email author
  • Viktor Sverdlov
    • 1
  • Siegfried Selberherr
    • 1
  1. 1.Institute for MicroelectronicsTU WienWienAustria

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