Nano-orbitronics in silicon

Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 159)


Shallow donor impurities in silicon, once frozen out at low temperature, share many properties in common with free hydrogen atoms [1]. They have long been the subject of spectroscopic investigation, but it is only very recently [2,3] that it has been possible to investigate the time-domain dynamics of orbital excitations such as the 1 s to 2p, due to the difficulty of obtaining short, intense pulses in the relevant wavelength range. These new techniques make shallow donors (and also acceptors [4]) attractive for studying atomic physics effects, and for applications in quantum information. We have measured the population dynamics of electrons orbiting around phosphorus impurities in commercially-available silicon, and shown that the lattice relaxation lifetime is about 200 ps, only 1 order of magnitude shorter than the radiative lifetime of free hydrogen.


White Dwarf Radiative Lifetime Shallow Donor Lattice Relaxation Time Free Hydrogen 
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Copyright information

© Springer International Publishing Switzerland 2015

Authors and Affiliations

  1. 1.Advanced Technology InstituteUniversity of SurreyGuildfordUK
  2. 2.London Centre for NanotechnologyUniversity College LondonLondonUK
  3. 3.Institute for Molecules and MaterialsRadboud University NijmegenNijmegenThe Netherlands
  4. 4.Department of PhysicsHeriot-Watt UniversityEdinburghUK

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