Imperfection in TSV Modeling

Chapter
Part of the Analog Circuits and Signal Processing book series (ACSP)

Abstract

Through silicon via (TSV) is an emerging technology that enables vertical integration of silicon dies forming a single three-dimensional integrated circuit (3D-IC) stack. This chapter studies the capacitive coupling between TSVs and metal wires with wave simulation. The wave-simulation results show that coupling is not negligible when TSV is relatively short compared to the TSV width, where the aspect ratio is < 5. Therefore, TSV-to-wire capacitance needs to be considered for the computation of TSV capacitance. If the aspect ratio is > 5, the effect of metal wires is not considered. Moreover, the effect of metal lines on TSV–TSV coupling can be neglected if the pitch is less than three times the TSV diameter. Moreover, coupling between TSVs and complementary metal-oxide semiconductor (CMOS) transistors is investigated. Several isolation techniques are also introduced.

Keywords

Imperfection Metal interconnects Via-first Via-last Lateral Stray Active DTI Shield Bulk Gate Nonuniform High resistivity Guard ring Electrical Performance 

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Copyright information

© Springer International Publishing Switzerland 2015

Authors and Affiliations

  1. 1.Mentor GraphicsHeliopolisEgypt
  2. 2.The American University (New Cairo) and Zewail City of Science and Technology (6th of October City)New CairoEgypt

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