TSV Modeling and Analysis

Chapter
Part of the Analog Circuits and Signal Processing book series (ACSP)

Abstract

A robust wideband lumped element model for an arbitrary arrangement of multi through silicon vias (TSVs) is introduced. The introduced model takes into account the skin effects, the nonlinear TSV capacitance, coupling parasitics, adjacent body contact effects, as well as the parasitic elements due to the finite substrate resistivity. The introduced model consists of linear circuit elements that are directly compatible with simulation program with integrated circuit emphasis (SPICE) simulators, where a single nonlinear or frequency-dependent element is approximated by a number of linear, frequency-independent elements. The dimensional analysis method along with three-dimensional (3D) quasi-static electromagnetic field simulation is utilized to develop closed-form expressions for the lumped elements of the TSV model. This study also shows that the TSV capacitance is highly dependent on the placement and count of adjacent ground body contacts and has a value of tens of femtofarads in a typical current technology. This value is much higher than a minimum device capacitance and requires special design methodologies such as cascaded buffers.

Keywords

Modeling Analysis Methodology Electromagnetic Lumped model Skin effect Capacitance Resistance Inductance MOS effect Nonlinearities Quasi-static Full-wave Simulators Dimensional Analysis Closed-form Curve fitting Linearization 

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Copyright information

© Springer International Publishing Switzerland 2015

Authors and Affiliations

  1. 1.Mentor GraphicsHeliopolisEgypt
  2. 2.The American University (New Cairo) and Zewail City of Science and Technology (6th of October City)New CairoEgypt

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