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Conclusions

Chapter
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Part of the Analog Circuits and Signal Processing book series (ACSP)

Abstract

Scaling of complementary metal-oxide semiconductor (CMOS) technology is saturating soon. This will definitively cause the seizure of development in computing if no alternatives are found. These alternatives should have the capacity to overcome all limitations of current techniques. These alternatives are silicon on insulator (SOI), FinFET, twin-well, high-K, metal gate, strained-Si, 3D, network on chip (NoC), optical, wireless, molecular computer, biological computer, and quantum computer. All these new technologies are under development and may be available for commercial use in the near future. Three-dimensional integration technology using through silicon via (TSV) is one of the possible future integrated circuit (IC) design technologies. It can offer many advantages over the existing 2D integration technology. However, many challenges (modeling, thermal, computer-aided design (CAD) tools, yield and test, technological, design methodologies, circuit architectures) should be overcome before TSV-based 3D IC production becomes possible.

Keywords

Spiral Inductor Field Solver High Frequency Structure Simulator Lump Element Model Lump Circuit Model 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Copyright information

© Springer International Publishing Switzerland 2015

Authors and Affiliations

  1. 1.Mentor GraphicsHeliopolisEgypt
  2. 2.The American University (New Cairo) and Zewail City of Science and Technology (6th of October City)New CairoEgypt

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