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Composite, Hybrid, and Multifunctional Materials, Volume 4 pp 15–28Cite as

Characterization of Shear Horizontal-Piezoelectric Wafer Active Sensor (SH-PWAS)

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Abstract

This paper discusses shear horizontal SH-coupled piezoelectric wafer active sensor (PWAS). The paper starts with a review of the state of the art in modeling SH transducers and their importance in non-destructive evaluation (NDE) and structural health monitoring (SHM). This is followed by basic sensing and actuation equations of shear-poled PWAS transducers. The free SH-PWAS electromechanical (E/M) impedance analytical models are presented, and compared with finite element models (FEM) and experiments. In this study, we extend the analytical development for constrained SH-PWAS bonded to structure on the form of beams. The model is based on normal mode expansion (NME) technique. The interaction between the SH-PWAS and the structure is studied. We developed closed-form equation of structure dynamic stiffness by coupling the mechanical response solution of the SH-PWAS to the structure elasticity solution. Finite element simulations and experiments matched well with analytical predictive model. Impedance spectroscopy is also used in NDE and SHM for composites. We present a predictive FEM for the E/M impedance of bonded SH-PWAS on cross ply GFRP as well as [0/45/45/0]s CFRP plates. The paper ends with summary, conclusion, and suggestions of future work.

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Abbreviations

D j :

Electric displacement vector (C/m2)

d 35 :

Piezoelectric strain constant for shear mode (m/V) or (C/N)

E j :

Electric field (V/m)

e 35 :

Piezoelectric stress constant for shear mode (N/Vm)

g 35 :

Piezoelectric voltage constant for shear mode (m2/C) or (Vm/N) or [(V/m)/Pa]

S ij :

Strain tensor

s D55 :

Mechanical shear compliance at zero electric displacement, D = 0 (m2/N)

T kl :

Stress tensor (N/m2)

γ :

Wave number (1/m)

ε T jk :

Dielectric permittivity matrix at zero mechanical stress, T = 0 (F/m)

ε S33 :

Dielectric permittivity in 33 direction measured at zero mechanical strain, S = 0

ε T33 :

Dielectric permittivity in 33 direction measured at zero mechanical stress, T = 0

K :

Electromechanical coupling factor

μ :

Shear modulus (Pa)

ω :

Angular frequency (rad/s)

Introducing some relations:

\( {g}_{35}=\frac{d_{35}}{\varepsilon_{33}^T} \) \( \kern2.5em \frac{1}{\varepsilon_{33}^T}=\frac{1}{\varepsilon_{33}^S}-\frac{g_{35}^2}{s_{55}^D} \) \( {e}_{35}=\frac{d_{35}}{s_{55}^E} \) \( {\varepsilon}_{33}^T={\varepsilon}_{33}^S+{d}_{35}{e}_{35} \) \( \frac{\varepsilon^S}{\varepsilon^T}=\frac{s^D}{s^E}=1-{K}^2 \) \( \frac{e_{35}}{\varepsilon_{33}^S}=\frac{g_{35}}{s_{55}^D} \) \( {K}_{35}^2=\frac{d_{35}^2}{s_{55}^E{\varepsilon}_{33}^T}=\frac{e_{35}^2{s}_{55}^D}{\varepsilon_{33}^S} \)

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Acknowledgements

This work was supported by Air Force Office of Scientific Research grant #FA9550-11-1-0133, program manager Dr. David Stargel; and the Office of Naval Research grant #N00014-11-0271, program manager Dr. Ignacio Perez.

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Authors and Affiliations

  1. Department of Mechanical Engineering, University of South Carolina, Columbia, SC, 29208, USA

    Ayman Kamal & Victor Giurgiutiu

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  1. Ayman Kamal
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  2. Victor Giurgiutiu
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Correspondence to Ayman Kamal .

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Editors and Affiliations

  1. University of Dayton, Dayton, Ohio, USA

    Gyaneshwar Tandon

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Kamal, A., Giurgiutiu, V. (2015). Characterization of Shear Horizontal-Piezoelectric Wafer Active Sensor (SH-PWAS). In: Tandon, G. (eds) Composite, Hybrid, and Multifunctional Materials, Volume 4. Conference Proceedings of the Society for Experimental Mechanics Series. Springer, Cham. https://doi.org/10.1007/978-3-319-06992-0_3

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  • DOI: https://doi.org/10.1007/978-3-319-06992-0_3

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  • Online ISBN: 978-3-319-06992-0

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