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Experimental and Applied Mechanics, Volume 6 pp 195–201Cite as

Raman Spectroscopy-Enhanced IIT: In Situ Analysis of Mechanically Stressed Polycrystalline Si Thin Films

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Abstract

Exposed to mechanical stress, semiconductor materials may phase transform, resulting in changes of crystallographic structure and material properties, rather than deform by plastic flow. As a consequence, prediction of the state and distribution of strain in semiconductors has become crucial for the evaluation of performance and reliability of structures made of these materials. Indentation-induced phase transformation processes were studied by in situ Raman imaging of the deformed contact region of silicon, employing a Raman spectroscopy-enhanced instrumented indentation technique (IIT). This is, to our knowledge, the first sequence of Raman images documenting the evolution of the strain fields and combined changes in the phase distributions of a material under contact load.

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Notes

  1. 1.

    Uncertainties represent manufacturer specifications.

  2. 2.

    Uncertainties represent intrinsic measurement errors and mounting errors.

  3. 3.

    The areas colored in black in the frequency plots for peaks 4 and 5 indicate that no signal for the particular peak was collected at these locations.

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Author information

Authors and Affiliations

  1. Material Measurements Laboratory, National Institute of Standards and Technology (NIST), 100 Bureau Drive, Gaithersburg, MD, 20899, USA

    Yvonne B. Gerbig, Chris A. Michaels & Robert F. Cook

  2. Department of Mechanical Engineering, University of Maryland, College Park, MD, 20472, USA

    Yvonne B. Gerbig

Authors
  1. Yvonne B. Gerbig
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  2. Chris A. Michaels
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  3. Robert F. Cook
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Corresponding author

Correspondence to Yvonne B. Gerbig .

Editor information

Editors and Affiliations

  1. Beckman Institute, University of Illinois Urbana-Champaign, Urbana, Illinois, USA

    Nancy Sottos

  2. University of Wisconsin, Madison, Wisconsin, USA

    Robert Rowlands

  3. Southwest Research Institute, San Antonio, Texas, USA

    Kathryn Dannemann

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© 2015 The Society for Experimental Mechanics, Inc.

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Gerbig, Y.B., Michaels, C.A., Cook, R.F. (2015). Raman Spectroscopy-Enhanced IIT: In Situ Analysis of Mechanically Stressed Polycrystalline Si Thin Films. In: Sottos, N., Rowlands, R., Dannemann, K. (eds) Experimental and Applied Mechanics, Volume 6. Conference Proceedings of the Society for Experimental Mechanics Series. Springer, Cham. https://doi.org/10.1007/978-3-319-06989-0_26

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  • DOI: https://doi.org/10.1007/978-3-319-06989-0_26

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-06988-3

  • Online ISBN: 978-3-319-06989-0

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