Growth Characteristics and Properties of Tin-Doped Indium Oxide Thin Films as a Function of Oxygen Pressure When Prepared by E-beam Evaporation

Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 293)


The Indium Tin Oxide (ITO) thin films were prepared by E-beam evaporation at oxygen pressure ranging from 1 × 10−4 to 1 × 10−3 Torr. The structure was analyzed by X-ray diffraction and the grain size was evaluated by Scherrer formula. The resistivity and transmittance were measured by 4-probe method and UV-Visible spectrophotometer, respectively. The crystallinity of ITO films increases with oxygen pressure increasing which also increase the intensity of (440). The grain size of ITO films increased with the oxygen pressure increasing. The resistivity decreased with oxygen pressure increasing, however, the transmittance increased. These results suggested that the deposition parameter of oxygen pressure plays an important role in ITO thin film preparation by E-bean evaporation.


ITO thin film E-beam evaporation Resistivity Transmittance 



This study great thank for Dr. Yuan-Shing Liu who supported the experimental equipment.


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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Hong-Hsin Huang
    • 1
  • Yen-Ming Chen
    • 1
  • Ming-Chih Huang
    • 2
  1. 1.Department of Electrical EngineeringCheng Shiu UniversityKaohsiungTaiwan, Republic of China
  2. 2.Department of Electrical EngineeringYu Ta Institute of Technology and CommercePing-Tong countyTaiwan, Republic of China

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