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Growth Characteristics and Properties of Tin-Doped Indium Oxide Thin Films as a Function of Oxygen Pressure When Prepared by E-beam Evaporation

Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 293)

Abstract

The Indium Tin Oxide (ITO) thin films were prepared by E-beam evaporation at oxygen pressure ranging from 1 × 10−4 to 1 × 10−3 Torr. The structure was analyzed by X-ray diffraction and the grain size was evaluated by Scherrer formula. The resistivity and transmittance were measured by 4-probe method and UV-Visible spectrophotometer, respectively. The crystallinity of ITO films increases with oxygen pressure increasing which also increase the intensity of (440). The grain size of ITO films increased with the oxygen pressure increasing. The resistivity decreased with oxygen pressure increasing, however, the transmittance increased. These results suggested that the deposition parameter of oxygen pressure plays an important role in ITO thin film preparation by E-bean evaporation.

Keywords:

ITO thin film E-beam evaporation Resistivity Transmittance 

Notes

Acknowledgments

This study great thank for Dr. Yuan-Shing Liu who supported the experimental equipment.

References

  1. 1.
    Ahn, J. H., Lee, J.-U., & Kim, T. W. (2007). Impedance characteristics of ITO/Alq3/Al organic light-emitting diodes depending on temperature. Current Applied Physics, 7, 509–512.CrossRefGoogle Scholar
  2. 2.
    Granqvist, C. G., & Hultåker, A. (2002). Transparent and conducting ITO films: new developments and applications. Thin Solid Films, 411, 1–5.CrossRefGoogle Scholar
  3. 3.
    Kachouane, A., Addou, M., Bougrine, E. L., Idrissi, A. B., Messoussi, R., Regragui, M., Bernede, J. C. (2001). Preparation and characterisation of tin-doped indium oxide films. Materials Chemistry and Physics, 70, 285–289.Google Scholar
  4. 4.
    Park, Y.-C., Kim, Y.-S., Seo, H.-K., Ansari, S. G., & Shin, H.-S. (2002). ITO thin films deposited at different oxygen flow rates on Si(100) using the PEMOCVD method. Surface and Coatings Technology, 161, 62–69.CrossRefGoogle Scholar
  5. 5.
    Cullity, D. (1978). Elements of X-ray Diffraction (2nd ed.). MA: Addison-wesley.Google Scholar
  6. 6.
    Son, P. K., Choi, S.-W., & Kim, S. S. (2012). Indium tin oxide exhibiting high poly-crystallinity on oxygen plasma-treated polyethylene terephthalate surface. Nanoscale Research Letters, 7(118), 1–4.Google Scholar
  7. 7.
    Park, S.-M., Ebihara, K., Ikegami, T., Lee, B.-J., Lim, K.-B., & Shin, P.-K. (2007). Enhanced performance of the OLED with plasma treated ITO and plasma polymerized thiophene buffer layer. Current Applied Physics, 7, 474–479.CrossRefGoogle Scholar
  8. 8.
    Meng, L.-J., Gao, J., Silva, R. A., & Song, S. (2008). Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD). Thin Solid Films, 516, 5454–5459.CrossRefGoogle Scholar
  9. 9.
    Yamaguchi, M., Ide-Ektessabi, A., Nomura, H., & Yasui, N. (2004). Characteristics of indium tin oxide thin films prepared using electron beam evaporation. Thin Solid Films, 447–448, 115–118.CrossRefGoogle Scholar
  10. 10.
    Kim, H. H., Cho, M. J., Lim, K. J., Shin, J. H., Park, J. I., & Ahn, J. I. (2002). RF Bias Effect of DC Reactively Sputtered ITO Filmson PET at Room Temperature. In: proceeding of International Conference on Electrical Engineering, (pp. 1257–1259). Korea: Jeju Island.Google Scholar
  11. 11.
    Kim, Y.-S., Park, Y.-C., Ansari, S. G., Lee, J.-Y., Lee, B.-S., & Shin, H.-S. (2003). Influence of O2 admixture and sputtering pressure on the properties of ITO thin films deposited on PET substrate using RF reactive magnetron sputtering. Surface and Coatings Technology, 173, 299–308.CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Hong-Hsin Huang
    • 1
  • Yen-Ming Chen
    • 1
  • Ming-Chih Huang
    • 2
  1. 1.Department of Electrical EngineeringCheng Shiu UniversityKaohsiungTaiwan, Republic of China
  2. 2.Department of Electrical EngineeringYu Ta Institute of Technology and CommercePing-Tong countyTaiwan, Republic of China

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