Comparison of Memristive Behaviors of HfTiO4/Invar-Based Structures at Nanometer Scale
In this paper, we compare the IV behaviors of the memresistive devices with structures of HfTiO4/ITO/Invar and SiO2/HfTiO4/SiO2/Invar. The IV measurements are conducted at nanometer scale using a conductive atomic force microscopy (C-AFM). The Invar is used as a back contact during the IV measurement. After repeated set/reset bias scans, it is found that the device with structure of SiO2/HfTiO4/SiO2/Invar presents better performance in memresistive characteristics. A minimum forming current of 10 nA is needed to startup the memresistive IV behavior. Both structures are unipolar memristor suggesting that the IV behaviors are strongly correlated with the joule heat induced by the ultra-high current density in the nonoscale measurements.
KeywordsMemresistive HfTiO4 Invar Nonometer scale
This work was financially supported by the National Science Council of Taiwan, ROC under contract no. NSC 100-2221-E-260-004-MY3.