Abstract
In this study, radio frequency magnetron sputtering was used to deposit indium-doped zinc oxide (IZO) films with varying deposition time on glass substrates. The structural, optical, and resistivity properties of IZO films were investigated with field emission scanning electron microscope, X-ray diffraction patterns, UV–visible spectroscopy, and Hall-effect analysis. XRD analysis on IZO films showed that only the (002) diffraction peak was observable, indicating that the IZO films showed a good c-axis orientation perpendicular to the glass substrates. As the deposition time of IZO films increased from 30 to 90 min, the thickness increased from 237 to 389 nm, the grain size increased from 12.3 to 87.6 nm, and the resistivity decreased from 9.08 × 10−3 to 2.85 × 10−3 Ω-cm. The transmittance was found to slightly decrease with the increasing thickness of IZO films.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Orgiu, E., Manunza, I., Sanna, M., Cosseddu, P., & Bonfiglio, A. (2008). Transparent dielectric films for organic thin-film transistors: A perspective for low cost, low size technologies. Thin Solid Films, 516, 1533–1537.
Paine, D. C., Yaglioglu, B., Beiley, Z., & Lee, S. (2008). Amorphous IZO-based transparent thin film transistors. Thin Solid Films, 516, 5894–5898.
Haacke, G. (1977). Transparent conducting coatings. Annual Review of Materials Science, 7, 73–93.
Chena, K. J., Fang, T. H., Hung, F. Y., Ji, L. W., Chang, S. J., Young, S. J., et al. (2008). The crystallization and physical properties of Al-doped ZnO nanoparticles. Applied Surface Science, 254, 5791–5795.
Taga, N., Maekawa, M., Shigesato, Y., Yasui, I., Kamei, M., & Haynes, T. E. (1998). Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy. Japanese Journal of Applied Physics, 37, 6524–6529.
Tuna, O., Selamet, Y., & Aygun, G. (2010). High quality ITO thin films grown by dc and RF sputtering without oxygen. Journal of Physics. D. Applied Physics, 43, 055402–055409.
Chen, X. L., Geng, X. H., Xue, J. M., & Li, L. N. (2007). Two-step growth of ZnO films with high conductivity and high roughness. Journal of Crystal Growth, 299, 77–81.
Chang, H. P., Wang, F. H., Wu, J. Y., Kung, C. Y., & Liu, H. W. (2010). Enhanced conductivity of aluminum doped ZnO films by hydrogen plasma treatment. Thin Solid Films, 518, 7445–7449.
Le, H. Q., Lim, S. K., Goh, G. K. L., Chua, S. J., & Ong, J. X. (2010). Optical and electrical properties of Ga-doped ZnO single crystalline films grown on MgAl2O4 (111) by low temperature hydrothermal synthesis semiconductor devices, materials, and processing. Journal of the Electrochemical Society, 157, H796–H800.
Huang, C. C., Wang, F. H., Wu, C. C., Huang, H. H., & Yang, C. F. (2013). Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films. Nanoscale Research Letters, 8(206), 1–8.
Minami, T., Yamamoto, T., & Toda, Y. (2000). Transparent conducting zinc-co-doped ITO films prepared by magnetron sputtering. Thin Solid Films, 373, 189–194.
Naghavi, N., Marcel, C., Dupont, L., Rougier, A., Leriche, J. B., & Guery, C. (2000). Structure and physical characterization of transparent conducting pulsed laser deposited In2O3–ZnO thin films. Journal of Materials Chemistry, 10, 2315–2319.
Wang, A. C., Dai, J. Y., Cheng, J. Z., Chudzik, M. P., & Marks, T. J. (1998). Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition. Applied Physics Letters, 73, 327–329.
Pasquarelli, R., Hest, M., Miedaner, A., Curtis, C., Perkins, J., & Berry, J., et al. (2009). Solution deposition of amorphous IZO films by ultrasonic spray pyrolysis. In Conference Record of the IEEE Photovoltaic Specialists Conference, USA, Golden, CO: Colorado School of Mines.
Burstein, E. (1954). Anomalous optical absorption limit in InSb. Physical Review, 93, 632–633.
Hamberg, I., Granqvist, C. G., Berggren, K. F., Sernelius, B. E., & Engstrom, L. (1984). Band-gap widening in heavily Sn-doped In2O3. Physical Review B, 30, 3240–3249.
Wu, C. C., & Yang, C. F. (2013). Fabricate heterojunction diode by using the modified spray pyrolysis method to deposit nickel-lithium oxide on indium tin oxide substrate. ACS Applied Materials & Interfaces, 5, 4996–5001.
Acknowledgments
The authors acknowledge financial support from NSC 102-2221-E-244 -019 - and NSC 102-2622-E-244 -001 -CC3.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2014 Springer International Publishing Switzerland
About this paper
Cite this paper
Wu, CC., Diao, CC., Yang, CC., Chao, YC., Kuo, CG., Yang, CF. (2014). Effects of Thickness on the Properties of Indium-Doped Zinc Oxide Films. In: Juang, J., Chen, CY., Yang, CF. (eds) Proceedings of the 2nd International Conference on Intelligent Technologies and Engineering Systems (ICITES2013). Lecture Notes in Electrical Engineering, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-319-04573-3_24
Download citation
DOI: https://doi.org/10.1007/978-3-319-04573-3_24
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-04572-6
Online ISBN: 978-3-319-04573-3
eBook Packages: EngineeringEngineering (R0)