GaN MIS Photodetectors with l,3-bis [2-(2,20-bipyridin-6–yl) -1,3,4-oxadiazol-5-yl]-benzene (Bpy-OXD) Insulators

  • Chin-Hsiang Chen
  • Ming-Han Yang
  • Wei-Chi Lin
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 293)


The study reports the fabrication of GaN metal–insulator-semiconductor (MIS) photodetectors (PDs) with a l,3-bis [2-(2,20-bipyridin-6-yl)-1,3,4-oxadiazol-5-yl]-benzene (Bpy-OXD) insulating layer. With a 5 V applied bias, the dark current and photocurrent of the fabricated GaN MIS PDs with Bpy-OXD insulating layers were 1.5 × 10−9 A and 1.82 × 10−7 A, respectively. It was also found that we can achieve the large photocurrent to dark current contrast ratio from the proposed device with the use of Bpy-OXD layers.


GaN MIS Bpy-OXD PDs Organic 


  1. 1.
    Lee, S. Y., Park, K. I., Huh, C., Koo, M., Yoo, H. G., & Kim, S., et al. (2012). Water-resistant flexible GaN LED on a liquid crystal polymer substrate for implantable biomedical applications. Nano Energy 1(98), 145–151. Google Scholar
  2. 2.
    Kim, J., Kim, H., & Lee, S. N. (2011). Thermal degradation in InGaN quantum wells in violet and blue GaN-based laser diodes. Current Applied Physics, 11, S167–S170.Google Scholar
  3. 3.
    Souissi, M., Schmerber, G., Derory, A., & Jani, B. E. (2012). Effects of high-temperature annealing on magnetic properties of V-doped GaN thin films grown by MOCVD. Journal of Magnetism and Magnetic Materials, 324, 2539–2542.Google Scholar
  4. 4.
    Müller, A., Konstantinidis, G., Androulidaki, M., Dinescu, A., Stefanescu, A., & Cismaru, A., et al. (2012). Front and backside-illuminated GaN/Si based metal-semiconductor-metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies. Thin Solid Films 520, 2158–2161.Google Scholar
  5. 5.
    You, K., Jiang, H., Li, D., Sun, X., Song, H., & Chen, Y., et al. (2012). Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors. Applied Physics Letters, 100, 121109.Google Scholar
  6. 6.
    Narita, T., Wakejima, A., & Egawa, T. (2013). Ultraviolet photodetectors using transparent gate AlGaN/GaN high electron mobility transistor on silicon substrate. Japanese Journal of Applied Physics, 52, 01AG06.Google Scholar
  7. 7.
    Li, D., Sun, X., Song, H., Li, Z., Chen, Y., Miao, G., et al. (2011). Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors. Applied Physics Letters, 98, 011108.Google Scholar
  8. 8.
    Chen, C. H. (2009). Self-organized InGaN nanodots grown by metal–organic chemical vapor deposition system. Optical Review, 16, 371.Google Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of Electronic EngineeringCheng Shiu UniversityKaohsiungTaiwan, Republic of China

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