GaN MIS Photodetectors with l,3-bis [2-(2,20-bipyridin-6–yl) -1,3,4-oxadiazol-5-yl]-benzene (Bpy-OXD) Insulators

Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 293)

Abstract

The study reports the fabrication of GaN metal–insulator-semiconductor (MIS) photodetectors (PDs) with a l,3-bis [2-(2,20-bipyridin-6-yl)-1,3,4-oxadiazol-5-yl]-benzene (Bpy-OXD) insulating layer. With a 5 V applied bias, the dark current and photocurrent of the fabricated GaN MIS PDs with Bpy-OXD insulating layers were 1.5 × 10−9 A and 1.82 × 10−7 A, respectively. It was also found that we can achieve the large photocurrent to dark current contrast ratio from the proposed device with the use of Bpy-OXD layers.

Keywords

GaN MIS Bpy-OXD PDs Organic 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of Electronic EngineeringCheng Shiu UniversityKaohsiungTaiwan, Republic of China

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