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Niche Applications of Graphene Within Silicon Technology

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Part of the book series: SpringerBriefs in Materials ((BRIEFSMATERIALS))

Abstract

In the previous two chapters we have outlined possible applications of graphene in two leading potential areas, solar cells and switching logic devices. These are arguably the largest applications that graphene might find, but are both only moderately likely to occur with large impact.

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Notes

  1. 1.

    Namely, after evacuation of the chemical vapor deposition CVD chamber, a Cu foil was heated to 875 °C in forming gas (H2/Ar) for 30 min. After this reduction, the Cu foil was exposed to ethylene at 975 °C for 10 min and then cooled. PMMA was spin-coated on top of the graphene layer that had formed on one side of the Cu foil. The Cu foil was then dissolved in 1 M iron chloride solution. The remaining graphene/PMMA layer was washed and transferred to the desired substrate. Subsequently the PMMA was dissolved by treatment with hot acetone for 1 h.

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Correspondence to E. L. Wolf .

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© 2014 Edward L. Wolf

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Wolf, E.L. (2014). Niche Applications of Graphene Within Silicon Technology. In: Applications of Graphene. SpringerBriefs in Materials. Springer, Cham. https://doi.org/10.1007/978-3-319-03946-6_5

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