Skip to main content
SpringerLink
Log in

Characteristics of Schottky Tunneling Barrier InP MOSFET with TiO2/Al2O3 as Gate Oxides

  • Conference paper
  • First Online:
Advanced Materials

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 152))

Abstract

The characteristics of Schottky tunneling barrier diodes and corresponding MOSFET with atomic layer deposited TiO2/Al2O3 stacked gate oxides were investigated. The Schottky barrier height is lowered from Schottky tunneling barrier. For Schottky tunneling barrier MOSFET with TiO2/Al2O3 gate oxides, good drain current-voltage and sub-threshold characteristics were obtained. This enhancement mode MOSFET has fairly good gate control and low gate leakage. The drain current is 18 μA/μm at V DS  = 3 V, V GS  = 2 V.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 169.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Hardcover Book
USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. M.K. Lee, C.F. Yen, S.H. Lin, J. Electrochem. Soc. 154(10), G229 (2007)

    Article  Google Scholar 

  2. Y.Q. Wu, Y. Xuan, T. Shen, P.D. Ye, Z. Cheng, A. Lochtefeld, Appl. Phys. Lett. 91(2), 022108 (2007)

    Article  Google Scholar 

  3. Y. Hwang, R.E. Herbert, N.G. Rudawski, S. Stemmer, Appl. Phys. Lett. 96(10), 102910 (2010)

    Article  Google Scholar 

  4. S.A. Campbell, D.C. Gilmer, X.C. Wang, M.T. Hsieh, H.S. Kim, W.L. Gladfelter, J.H. Yan, IEEE Tran. Electron Devices 44(1), 104 (1997)

    Article  Google Scholar 

  5. S.M. Sze, K.K. Ng, Physics of Semiconductor Devices, 3rd edn. (Wiley, New York, 2006)

    Book  Google Scholar 

  6. K. Kita, A. Toriumi, Appl. Phys. Lett. 94, 132902 (2009)

    Article  Google Scholar 

Download references

Acknowledgments

The authors would like to thank the National Science Council of Republic of China for their support under contract No. 101-2221-E-033-080-MY3.

Author information

Authors and Affiliations

  1. Department of Electronic Engineering, Chung Yuan Christian University, Chung Li, 32023, Republic of China (Taiwan)

    Yong-Cheng Lu, Chih-Feng Yen & Ming-Kwei Lee

  2. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, 80424, Republic of China (Taiwan)

    Jung-Chan Lee, Hao Cheng & Tzu-Hsien Tang

Authors
  1. Yong-Cheng Lu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Chih-Feng Yen
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Jung-Chan Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Hao Cheng
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Tzu-Hsien Tang
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Ming-Kwei Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Ming-Kwei Lee .

Editor information

Editors and Affiliations

  1. Dept. of Microelectronics Engineering, National Kaohsiung Marine University, Kaohsiung, Taiwan

    Shun-Hsyung Chang

  2. Mechanics and Applied Mathematics Research Inst., Southern Federal University, Rostov-on-Don, Russia

    Ivan A. Parinov

  3. Dept. Physics, Southern Federal University, Rostov on Don, Russia

    Vitaly Yu. Topolov

Rights and permissions

Reprints and permissions

Copyright information

© 2014 Springer International Publishing Switzerland

About this paper

Cite this paper

Lu, YC., Yen, CF., Lee, JC., Cheng, H., Tang, TH., Lee, MK. (2014). Characteristics of Schottky Tunneling Barrier InP MOSFET with TiO2/Al2O3 as Gate Oxides. In: Chang, SH., Parinov, I., Topolov, V. (eds) Advanced Materials. Springer Proceedings in Physics, vol 152. Springer, Cham. https://doi.org/10.1007/978-3-319-03749-3_10

Download citation

Publish with us

Policies and ethics

Search

Navigation