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Subsecond Annealing of Advanced Materials pp 79–105Cite as

Structural Changes in SiGe/Si Layers Induced by Fast Crystallization

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Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 192))

Abstract

SiGe alloys are promising for employment in nano-electronics, infrared photodetectors and next generation of solar cells. The present short review surveys the new field of SiGe transient processing dealing with unusual phase transitions, segregation and structural changes. Fast segregation leads to constitutional supercooling in the melt near the front of crystallization which then results in faceting of the liquid-solid interface followed by generation of extended defects, spatial variation of the composition and formation of nano-cellular structure. Faceting of the interface and formation of cellular structure depends strongly on SiGe alloy composition and on the velocity of melt-solid interface (solidification). Therefore fast processing might become an alternative and very promising pathway for the treatment of SiGe layers and nanostructures. The following issues are shortly reviewed: Segregation of Ge to nanometer-scale cellular network and islands: effect of SiGe composition and crystallization velocity; Morphology and atomic structure of swift heavy ion-induced discontinuous tracks in SiGe alloy layers as a result of fast segregation; Pulsed laser modification of Ge and GeSn nanodots; Laser-induced melting and recrystallization of polycrystalline Ge layer.

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Acknowledgements

This research was supported by a Marie Curie International Incoming Fellowship within the 7th European Community Framework Programme (project N∘ 298932, call reference: FP7-PEOPLE-2011-IIF). The work was in part financed by GPNI Electronics foundation (Belarus). The authors would like to thank A. Nylandsted Larsen for fruitful discussions, J. Lundsgaard Hansen for MBE growth, G.D. Ivlev for laser treatments, S.V. Gusakova for SEM and O.V. Korolik for Raman measurements.

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  1. Department of Physical Electronic and Nanotechnology, Belarusian State University, Nezavisimosti 4, Minsk, 220030, Belarus

    P. I. Gaiduk & S. L. Prakopyeu

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  1. Inst. Ionenstrahlphysik und Materialforschung, Abt. Neue Materialien, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Sachsen, Germany

    Wolfgang Skorupa

  2. Materialsysteme der Nanoelektronik Nano-Spintronics Group, Chemnitz University of Technology, Chemnitz, Germany

    Heidemarie Schmidt

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Gaiduk, P.I., Prakopyeu, S.L. (2014). Structural Changes in SiGe/Si Layers Induced by Fast Crystallization. In: Skorupa, W., Schmidt, H. (eds) Subsecond Annealing of Advanced Materials. Springer Series in Materials Science, vol 192. Springer, Cham. https://doi.org/10.1007/978-3-319-03131-6_5

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