Measurement of Variation of Minority Carrier Lifetime in 8 MeV Electron Irradiated c-Si Solar Cells Using RRT Method
The variation of minority carrier lifetime in c-Si solar cells due to the irradiation of 8 MeV electrons of various doses ranging from 5 to 100 kGy was studied. The minority carrier lifetime and diffusion length of c-Si solar cells were determined before and after irradiation using the reverse recovery transient (RRT) method. The minority carrier lifetime is found to decrease with increasing electron dose, which is interpreted as due to the creation of non-radiative recombination centers which affects the diffusion current. The minority carrier diffusion length decreases exponentially with electron dose. The reduction in diffusion length due to electron irradiation will reduce the conversion efficiency of solar cells.
KeywordsSolar cell Efficiency Carrier lifetime and diffusion length
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The authors thank the Staff and Research Scholars of Microtron Centre, Mangalore University, for their help during irradiation. The authors gratefully acknowledge DAE-BRNS, for the financial assistance. The authors thank ISRO satellite centre, Bangalore for providing the solar cells. The authors gratefully acknowledge the support and encouragement given by the Management of Mangalore Institute of Technology and Engineering, Moodbidri.
- 1.W.C. Cooley and R.J. Janda, Hand book of space radiation effects on solar cell power systems. NASA/N63-20315 (1963).Google Scholar
- 2.M.Z. Rahman, International Journal of Renewable Energy Research, 2(1), 117-122 (2012).Google Scholar
- 3.J. A. Giesecke, B. Michl, F.Schindler, M. C. Schubert and W. Warta, Solar Energy Mater. Solar Cells. 95(7) 1979–1982 (2011).Google Scholar
- 4.S. Daliento, L. Mele, L. Lancelotti, P. Morvillo, E. Bobeico, F. Roca, L. Pirozzi, Performances characterization of concentration solar cells by means of I-V and lifetime measurements made with the QSSPC technique, 21st European Photovoltaic Solar Energy Conference and Exhibition (2006).Google Scholar
- 5.D.K. Schroder, Semiconductor Materials and Device Characterization, John Wiley, New York, (1990) pp.394.Google Scholar
- 6.B.G. Streetman and S. Banerjee, Solid State Electronics, fifth ed., Prentice Hall of India, (2000).Google Scholar
- 8.B. Lax and S.F. Neustadter, J. Appl. Phys. 25, 1148-1154 (1954).  M. Ferrara, Electroluminescence of a-Si/c-Si Heterojunction Solar Cells after High Energy Irradiation. PhD Thesis, Hagen (2009).Google Scholar
- 10.H. Y. Tada and J. R. Carter, Solar Cell Radiation Handbook. NASA/N78-1556.Google Scholar