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Study of Schottky Barrier Contact in Hybrid CdSe Quantum Dot Organic Solar Cells

  • M. Ramar
  • R. Manimozhi
  • C. K. Suman
  • R. Ahamad
  • Ritu Srivastava
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

The hybrid organic solar cell devices are fabricated from P3HT:PCBM with Quantum dot CdSe materials.The Schottky barrier built-in potential of 0.45 V was calculated from C–V measurements. The photo current (JLight − JDark) equals to zero at compensation voltage of 0.61 V. The depletion width (W) of an abrupt Schottky junction is calculated using carrier density. The Cole–Cole plot of the device is also determined from different bias voltage in the range of 10–1 MHz. The device can be modeled as the combination of RC parallel circuit.

Keywords

Schottky barrier Compensation voltage 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • M. Ramar
    • 1
  • R. Manimozhi
    • 2
  • C. K. Suman
    • 1
  • R. Ahamad
    • 1
  • Ritu Srivastava
    • 1
  1. 1.CSIR-Network of Institutes for Solar EnergyCSIR-National Physical LaboratoryNew DelhiIndia
  2. 2.J S S Academy of Technical EducationNoidaIndia

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