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Role of Plane and Textured TCO Surfaces in Enhancing the Efficiency of Thin Film Amorphous Silicon Solar cell: A Theoretical Approach

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

In the present work, comparison is made between ITO indium tin oxide) and ZnO (zinc oxide) as TCO layer for the amorphous silicon (a-Si:H) solar cell applications using AFORS-HET simulation software. In order to improve the efficiency of a-Si:H solar cell optimization of band gap of p layer was done along with suggesting the effective light trapping measures which can be adopted in this regard. The optimized value of band gap for p layer 2.1 eV was found for obtaining maximum efficiencies of 14.91 % with ITO and 17.02 % with ZnO as front contact. The further study explored the use of textured TCO surfaces instead of the plane surfaces. The use of textured surfaces of ITO and ZnO enhanced the efficiencies to 15.85 % and 18.10 % respectively at optimized values of the band gap of p, i, and n layers. Hence the overall investigation of a-Si:H solar cells with the idea of maximizing the light trapping using plane as well as textured surfaces of TCO coatings suggests the possibilities for fabrication of efficient a-Si:H solar cells. Our simulation results reveals ZnO as suitable TCO material in order to enhance the efficiencies of solar cell compared to ITO.

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Acknowledgements

The authors are grateful to Director, National Physical Laboratory, New Delhi (India) for his kind support. We are thankful to the CSIR-India for TAPSUN program and MNRE (Sanction No. 31/29/2010-11/PVSE), Govt. of India for the research grant. Authors also acknowledge Helmholtz-Zentrum Berlin for providing AFORS-HET simulation software.

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Correspondence to Mansi Sharma .

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Sharma, M., Rawat, A., Sudhakar, S., Juneja, S., Kumar, S. (2014). Role of Plane and Textured TCO Surfaces in Enhancing the Efficiency of Thin Film Amorphous Silicon Solar cell: A Theoretical Approach. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_85

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