Investigation of Current Conduction Mechanism in HfO2 Thin Film on Silicon Substrate

  • Anil G. KhairnarEmail author
  • Khushaboo S. Agrawal
  • Vilas S. Patil
  • Ashok M. MahajanEmail author
Part of the Environmental Science and Engineering book series (ESE)


In this work, we have investigated current conduction mechanisms in HfO2 thin film deposited on silicon substrate by RF sputtering technique. The thin films of HfO2 were deposited on p-type silicon substrates. FTIR measurement shows the presence of hafnium in the film. Among the various conduction mechanisms the 13.7 nm thin HfO2 film on Si follows the Fowler–Nordheim (FN) tunneling. The Poole–Frenkel (PF) emission, Schottky emission (SE) and Direct Tunneling (DT) also studied. The barrier height (ϕB) of 0.74 eV is calculated from experimental work through Fowler–Nordheim tunneling mechanism.


HfO2 High-k FTIR Leakage current density FN tunneling 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.



Authors are thankful to CEN, IITB for providing necessary fabrication and characterization facilities under INUP scheme. One of the author’s A. G. Khairnar is thankful to Council of Scientific and Industrial Research (CSIR) New Delhi, India for providing Senior Research Fellowship for carrying out this work [File No. 09/728(0029)/2012-EMR-I].


  1. 1.
    J. Robertson, Rep. Prog. Phys, 69, 327 (2006).Google Scholar
  2. 2.
    M. Houssa, L. Pantisano, L.A. Ragnarsson, R. Degraeve, T. Schram, G. Pourtois, S. De Gendt, G. Groeseneken, M. M. Heyns, Materials Science and Engineering, R 51, 37 (2006).Google Scholar
  3. 3.
    H. J. Quah and K. Y. Cheong, Nanoscale Research Letters, 53, 1-7 (2013).Google Scholar
  4. 4.
    A. G. Khairnar and A. M. Mahajan, Bull. Mater. Sci., 36(2), 259-263 (2013).Google Scholar
  5. 5.
    L. Kornblum, B. Meyler, J. Salzman and M. Eizenberg, Journal of Applied Physics, 113, 074102 (2013).CrossRefGoogle Scholar
  6. 6.
    H. Doscher, G. Lilienkamp, P. Iskra, M. Kazempoor and W. Daum, J. Vac. Sci. Technol, B 28(4), C5B5 (2010).Google Scholar
  7. 7.
    A. M. Mahajan, A. G. Khairnar, B. J. Thibeault, accepted in Semiconductors (Springer) July 2013.Google Scholar
  8. 8.
    C. Wiemer, L. Lamagna and M. Fanciulli, Semicond. Sci. Technol, 27, 074013 (2012).Google Scholar
  9. 9.
    G. He, Z. Sun, G. Li and L. Zhang, Critical Reviews in Solid State and Materials Sciences, 37, 131 (2012).CrossRefGoogle Scholar
  10. 10.
    M.G. Blanchin, B. Canut, Y. Lambert, V. S. Teodorescu, A. Barau and M. Zaharescu, J. Sol-Gel Sci Technol, 47, 165 (2008).Google Scholar
  11. 11.
    A. G. Khairnar, A. M. Mahajan, Solid-State Sciences, 15(1), 24 (2013).CrossRefGoogle Scholar
  12. 12.
    A. Devi, S. Cwik, K. Xu, A. P. Milanov, H. Noei, Y. Wang, D. Barreca, J. Meijer, D. Rogalla, D. Kahn, R. Cross, H. Parala and S. Paul, Thin Solid Films, 520, 4512 (2012).CrossRefGoogle Scholar
  13. 13.
    M. Modreanu, J. Sancho-Parramon, D. O.Connell, J. Justice, O. Durand, B. Servet, Materials Science and Engineering, B 118, 127 (2005).CrossRefGoogle Scholar
  14. 14.
    R. Garg, D. Misra and P. K. Swain, Journal of The Electrochemical Society, 153-2, F29 (2006).CrossRefGoogle Scholar
  15. 15.
    Kow-Ming Chang, Bwo-Ning Chen and Shih-Ming Huang, Applied Surface Science, 254, 6116 (2008).CrossRefGoogle Scholar
  16. 16.
    Y. Seo, S. Lee, Ilsin An, C. Song and H. Jeong, Semicond. Sci. Technol., 24, 115016 (2009).CrossRefGoogle Scholar
  17. 17.
    K. Y. Cheong, J. H. Moon, H. J. Kim, W. Bahng, and Nam-Kyun Kim, J. Appl. Phys. 103, 084113 (2008).Google Scholar
  18. 18.
    P. M. Tirmali, A. G. Khairnar, B. N. Joshi and A. M. Mahajan, Solid-State Electron,62(1), 44 (2011).Google Scholar
  19. 19.
    R. Jiang, E. Q. Xie & Z. F. Wang, J Mater Sci, 42, 7343 (2007).CrossRefGoogle Scholar
  20. 20.
    S Chakraborty, M K Bera, G K Dalapati, D Paramanik, S Varma, P K Bose, S Bhattacharya and C K Maiti, Semicond. Sci. Technol. 21, 467 (2006).CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of ElectronicsSchool of Physical Sciences, North Maharashtra UniversityJalgaonIndia

Personalised recommendations