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Microwave Characteristics of SiC IMPATT Diodes at 220 GHz

  • S R Pattanaik
  • J Pradhan
  • S K Swain
  • G N Dash
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

The microwave characteristics of SiC IMPATT diodes at 220 GHz are simulated in this paper. In our simulation study, we have considered both the SDR and DDR structures of IMPATT diode based on 4H-SiC and 6H-SiC materials. The simulation of these diodes reveals that 4H-SiC is a promising material for IMPATT applications based on DDR structure with a minimum noise measure as compare to 6H-SiC semiconductor. It is also interesting to note that n-type 4H-SiC SDR IMPATT diode outperforms the other SDR IMPATT diodes in terms of noise measure.

Keywords

IMPATT Microwave and SiC 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • S R Pattanaik
    • 1
  • J Pradhan
    • 2
  • S K Swain
    • 2
  • G N Dash
    • 2
  1. 1.Apex Institute of Technology and ManagementBhubaneswarIndia
  2. 2.School of PhysicsSambalpur UniversitySambalpurIndia

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