Comprehensive Analytical Modeling of N-polar GaN/AlGaN Insulated Gate HEMTs with and without Polarization Neutralization Layer
Electrical characteristics of N-polar GaN/AlxGa1-xN insulated gate (MIS) HEMTs are theoretically analyzed. Threshold voltage models are developed for both the generalized and the polarization neutralized structures. Based on these developments, the drain current and transconductance are formulated after incorporation of an appropriate Monte-Carlo simulation based mobility model for GaN. Non-idealities such as imaging charges in the interface/buffer, source drain resistances, and velocity saturation are taken into account in the present model. The analytical results on the transport characteristics of the device are compared with experimentally measured data and are in close agreement.
KeywordsMISHEMT N-polar GaN Threshold voltage
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The authors are thankful to the Dept. of Electronics and Information Technology (Govt. of India) for the financial assistance in the ENS project.
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