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Influence of Source-Gate and Gate Lengths Variations on GaN HEMTs Based Biosensor

  • Niketa Sharma
  • Diksha Joshi
  • Nidhi Chaturvedi
Part of the Environmental Science and Engineering book series (ESE)

Abstract

AlGaN/GaN has been considered as a promising candidate for bio-sensing applications due to their outstanding properties. Scaling of gate length and source to gate length plays a key role in the performance of biosensor as it directly influences the device transconductance and hence the sensitivity and response time of biosensors. In this paper, we investigated the effect of variations in gate lengths (1–5 μm) and source to gate length (1–3 μm) to choose the most suitable one for bio sensing applications. Downscaling of gate length (LG) and source to gate length (LSG) improve the device performance, enhancing the drain-current (Ids) and device transconductance. The results of simulations indicate that LG1 μm_LSG1μm with constant LSD configuration shows highest output current 1.01 A/mm, transconductance (gm) 211 mS/mm with lowest value of gate leakage current. Irrespective of LSG, effect of variation in LG follows same trend.

Keywords

HEMTs Biosensor Transconductance and senstivity 

Notes

Acknowledgments

The authors are indebted to Dr. Chandra Shekhar, director, CEERI and Dr. C. Dhanvantri, GL-ODG, CEERI, Pilani for his support and encouragement. Authors would also like to thank CSIR for funding under budget head PSC-201:Microsensys.

References

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    Gilles Dambrine, Alain Cappy, Frederic Heliodore and Edouard Playez, IEEE Transactions on Microwave Theory and Techniques, Vol.36, No. 7 (1988).Google Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.CSIR-Central Electronics Engineering Research InstitutePilaniIndia

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