Prformance Investigation of Dual Material Gate Stack Schottky-Barrier Source/Drain GAA MOSFET for Analog Applications
This paper presents the analog performance of the Dual Material Gate Stack (DMGS) Schottky–Barrier (SB) Source/Drain (S/D) Gate All Around (GAA) MOSFET. A comprehensive comparative analysis has been carried out with doped source/drain by using ATLAS device simulator. Impact of gate material engineering such as dual material gate and the high-k dielectric has been carried out in detail. The analysis reveals that new structure exhibits superior analog performance. The DMGS-SB-S/D GAA has a number of desirable features, i.e. high on-state current Ion, increased current gain, improved transconductance gm, improved output conductance gd, high unity-gain frequency fT, and maximum transducer power gain. MOSFET with metal S/D shows the faster performance due to low parasitic S/D resistance offered by SB-S/D. So it can be used for faster switching and high frequency applications.