Prformance Investigation of Dual Material Gate Stack Schottky-Barrier Source/Drain GAA MOSFET for Analog Applications

  • Manoj Kumar
  • Subhasis Haldar
  • Mridula Gupta
  • R. S. Gupta
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

This paper presents the analog performance of the Dual Material Gate Stack (DMGS) Schottky–Barrier (SB) Source/Drain (S/D) Gate All Around (GAA) MOSFET. A comprehensive comparative analysis has been carried out with doped source/drain by using ATLAS device simulator. Impact of gate material engineering such as dual material gate and the high-k dielectric has been carried out in detail. The analysis reveals that new structure exhibits superior analog performance. The DMGS-SB-S/D GAA has a number of desirable features, i.e. high on-state current Ion, increased current gain, improved transconductance gm, improved output conductance gd, high unity-gain frequency fT, and maximum transducer power gain. MOSFET with metal S/D shows the faster performance due to low parasitic S/D resistance offered by SB-S/D. So it can be used for faster switching and high frequency applications.

Keywords

Gate all around Gate stack Schottky-barrier source/drain ATLAS device simulator 

References

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Manoj Kumar
    • 1
  • Subhasis Haldar
    • 2
  • Mridula Gupta
    • 3
  • R. S. Gupta
    • 1
  1. 1.Department of Electronics and Communication EngineeringMaharaja Agrasen Institute of TechnologyDelhiIndia
  2. 2.Department of Physics, Motilal Nehru CollegeUniversity of DelhiNew DelhiIndia
  3. 3.Department of Electronic ScienceUniversity of Delhi South CampusNew DelhiIndia

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