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Influence of Interface Deep Traps on Capacitance of AlGaN/GaN Heterojunctions

  • Jozef Osvald
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

We have studied by modeling and simulation dependence of capacitance of AlGaN/GaN heterostructures by the presence of deep traps localized at the AlGaN and GaN interface. For low frequency capacitance the deep traps cause voltage shift of capacitance curves when the traps concentration is relatively low. With increasing traps concentration the voltage shift increases and above some critical traps concentration the new capacitance peak is observed in the CV curve. We expect that in experimental structures only traps located close to the conduction band minimum can follow external signal.

Keywords

III-N heterostructures Heterostructure capacitance 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Institute of Electrical Engineering, Slovak Academy of SciencesBratislavaSlovakia

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