Abstract
We have studied by modeling and simulation dependence of capacitance of AlGaN/GaN heterostructures by the presence of deep traps localized at the AlGaN and GaN interface. For low frequency capacitance the deep traps cause voltage shift of capacitance curves when the traps concentration is relatively low. With increasing traps concentration the voltage shift increases and above some critical traps concentration the new capacitance peak is observed in the C–V curve. We expect that in experimental structures only traps located close to the conduction band minimum can follow external signal.
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Osvald, J. (2014). Influence of Interface Deep Traps on Capacitance of AlGaN/GaN Heterojunctions. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_53
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DOI: https://doi.org/10.1007/978-3-319-03002-9_53
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