Stress-induced Degradation and Defect Studies in Strained-Si/SiGe MOSFETs
Effect of threading dislocations contributing to the increased 1/f noise in strained-Si MOSFETs is studied. Results of low-frequency noise study of strain-engineered MOSFETs are presented including 1/f and random telegraph noise (RTN). From the bias dependency of 1/f noise the correlated mobility fluctuation model (in NMOSFETs) is identified as the dominant noise mechanism. The low-frequency noise study reveals electrical stress-induced device degradation shown by the increased 1/f noise and complex RTN indicating reliability issues. A detailed low-frequency noise study in highly-scaled, strained MOS devices is presented indicating the capabilities of LF noise study for assessing device quality and lifetime essential in reliability analysis.
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