Two Dimensional Model for Threshold Voltage Roll-Off of Short Channel High-k Gate-Stack Double-Gate (DG) MOSFETs

  • Ekta Goel
  • Sanjay Kumar
  • Gopal Rawat
  • Mirgender Kumar
  • Sarvesh Dubey
  • S. Jit
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

In this paper a two-dimensional (2D) model of threshold voltage roll-off of uniformly doped high-k gate stack double-gate (DG) metal–oxide–semiconductor field-effect transistors (MOSFETs) is presented. The surface potential is obtained by solving the 2D Poisson’s equation using evanescent mode analysis and then it is used to model the threshold voltage roll-off. Threshold voltage roll-off variations against device channel length for different values of gate dielectric constant and silicon film thickness are shown. The modeling results show a good agreement with the numerical simulation data obtained by ATLAS™, a 2D device simulator from SILVACO.

Keywords

DG MOSFET High-k Threshold voltage roll-off SCE EOT 

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References

  1. 1.
    G Wilk, R M Wallace, J M Anthony, J. Appl. Phys., 89, 5243 (2001).Google Scholar
  2. 2.
    R M Wallace, G D Wilk, Crit. Rev. Solid State Mater. Sci., 28, 231 (2003).Google Scholar
  3. 3.
    J Robertson, Eur. Phys. J. Appl. Phys., 28, 265 (2004).CrossRefGoogle Scholar
  4. 4.
    R. Chaneliere C, S Four, JL Autran, RAB Devine, NP Sandler, J. Appl. Phys., 83, 4823 (1998).Google Scholar
  5. 5.
    SA Campbell, DC Gilmer, X-C Wang, M-T Hsieh, H-S Kim, WL Gladfelter, IEEE Trans. Electron Devices, 44 104 (1997).CrossRefGoogle Scholar
  6. 6.
    G. Zhang, Z. Shao, and K. Zhou, IEEE Trans. Electron Devices, 55, 803 (2008).CrossRefGoogle Scholar
  7. 7.
    S.-H. Oh, D. Monroe, and J. M. Hergenrother, IEEE Electron Device Lett., 21, 445 (2000).CrossRefGoogle Scholar
  8. 8.
    A. Dasgupta and S. K. Lahiri, IEEE Trans. Electron Devices, 35, 390 (1988).CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Ekta Goel
    • 1
  • Sanjay Kumar
    • 1
  • Gopal Rawat
    • 1
  • Mirgender Kumar
    • 1
  • Sarvesh Dubey
    • 2
  • S. Jit
    • 1
  1. 1.Department of Electronics EngineeringIndian Institute of Technology (BHU)VaranasiIndia
  2. 2.Department of Electronics and Communication EngineeringShri Ramswaroop Memorial UniversityLucknowIndia

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