Reduction of Electron Overflow Problem by Improved InGaN/GaN Based Multiple Quantum Well LEDs Structure with p- AlInGaN/AlGaN EBL Layer

Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

InGaN/GaN-based Multi Quantum Well (MQW) LEDS with p-AlInGaN/AlGaN electron blocking layers (EBL) are studied using the SimuLED simulator. The simulation results specify the importance of p-AlInGaN/AlGaN electron blocking layers to suppress the electron overflow problem in the InGaN based MQW LED device structure for the further improvement in the optical and electrical performance of the device. The designed AlInGaN/AlGaN EBL was investigated by changing different Al and In concentrations and was analyzed. It shows a reduction in electron overflow and subsequent increase in Internal Quantum Efficiency by insertion of AlXInYGa1-X-YN-Al0.15Ga0.85N(X = 0.1, Y = 0.15) EBL instead of conventional AlGaN EBL. Structure shows a significant reduction in efficiency droop and aiding a supportive barrier for electron overflow.

Keywords

Efficiency droop Electron overflow EBL MQW LEDs Simulation 

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Notes

Acknowledgments

The authors would like to acknowledge Senior Research Fellowship (CSIR-SRF) from Council of Scientific and Industrial Research (CSIR), India for their financial support.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Crystal Growth CentreAnna UniversityChennaiIndia

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