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Modeling and Simulation of Package Inductance for Pulsed IMPATT Diodes with Integrated Beam Lead Structure

  • Conference paper
Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

High Power Pulsed IMPATT diodes are now being fabricated with Integrated Beam Lead Structure for top electrical contact inside diode package to obtain higher output power, greater bondability and better Thermal Dissipation. Relatively lower package Impedance of Beam lead structure ensures better device circuit interaction. The authors have introduced a novel analytical method based on HFSS software to predict the value of Package Impedance of a Beam Lead Structure as well as its dependence on dimensional parameters.

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Acknoeledgments

The authors would like to acknowledge the constant support and guidance extended by Dr. P. Datta, Director, CMSDS. The authors would also like to express their gratitude to Mr. Arijit Majumder, Officer in Charge, SAMEER Kolkata, for his invaluable inputs.

Author information

Authors and Affiliations

  1. Centre for Millimeter-wave Semiconductor Devices and Systems (CMSDS), DRDO, Kolkata, India

    Arijit Das, Diptadip Chakraborty & Nabin Chandra Mandal

Authors
  1. Arijit Das
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  2. Diptadip Chakraborty
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  3. Nabin Chandra Mandal
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Corresponding author

Correspondence to Arijit Das .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Das, A., Chakraborty, D., Mandal, N.C. (2014). Modeling and Simulation of Package Inductance for Pulsed IMPATT Diodes with Integrated Beam Lead Structure. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_45

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