Bipolar Attributes of Unipolar Junctionless MOSFETs

  • Mukta Singh Parihar
  • Abhinav KrantiEmail author
Conference paper
Part of the Environmental Science and Engineering book series (ESE)


In this work, we present an analysis of bipolar effects in unipolar junctionless (JL) MOSFETs. The reason for dominant bipolar behavior in JL devices in comparison to inversion mode devices has been analyzed. Bipolar induced effects such as steep subthreshold slope, hysteresis in transfer and output characteristics, single transistor latch, and snapback are presented. Results will be useful for identifying advantages and challenges of JL transistors for dynamic memory applications.


Junctionless MOSFET Bipolar Hysteresis 



This work is supported by the Science and Engineering Research Board, Department of Science and Technology, Government of India, under Grant SR/S3/EECS/0130/2011.


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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Low Power Nanoelectronics Research GroupIndian Institute of TechnologyIndoreIndia

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