Small-Signal RF and Microwave Characteristics of Sub-Micron AlGaN/GaN HEMT

  • T. R. LenkaEmail author
  • G. N. Dash
  • A. K. Panda
Part of the Environmental Science and Engineering book series (ESE)


AlGaN/GaN high electron mobility transistors (HEMTs) have tremendous applications as high-power, high-temperature and high-frequency devices due to some unique material properties of GaN. Looking at the prospects of AlGaN/GaN material system in ultra high-frequency applications, we discuss the small signal RF and Microwave characteristics of sub-micron (0.25 μm gate-length) recessed gate AlGaN/GaN HEMT in this paper. The RF and Microwave characteristics discussed in this paper include max-frequency of oscillation (fmax), cut-off frequency (ft), current-gain (h21), Masons unilateral gain (MUG) and Maximum Stable Gain (MSG). We have also included the stability analysis by Rollett stability factor (K), followed by Smith Chart and Polar plots within the scope of this paper. The fmax and ft are compared with the available experimental results from the literature.


2DEG GaN HEMT Microwave 


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The first author acknowledges TEQIP-II at National Institute of Technology, Silchar for funding to present the paper. The authors also acknowledge the DST-SERC project received by National Institute of Science and Technology, Berhampur, Odisha to carry out the research work.


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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of Electronics and Communication EngineeringNational Institute of TechnologySilcharIndia
  2. 2.School of PhysicsSambalpur UniversitySambalpurIndia
  3. 3.National Institute of Science and TechnologyBerhampurIndia

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