A Method to Characterize Microstrip Lines for Design of MMICs up to 40 GHz

  • Samuder GuptaEmail author
  • Subhash Chander
  • Ashok Kumar
Conference paper
Part of the Environmental Science and Engineering book series (ESE)


This paper presents the characterization method for microstrip lines of different characteristic impedance used for design of Microwave Monolithic Integrated Circuits (MMIC) up to 40 GHz. This characterization method is based on extracting the T-matrix of coplanar waveguide-to-microstrip (CPW-M) transitions the S-parameters of two microstrip lines of different lengths, each of which includes CPW-M transitions on either-side. The T-matrix of CPW-M is then subtracted from the S-parameters of microstrip line with CPW_M transitions to obtain the S-parameters of only the microstrip line without CPW-M. To validate the proposed method the extracted S-parameter matrix of microstrip lines have been compared with the electromagnetic simulation results of microstrip lines without CPW-M transition. This exercise has been carried out on GaAs (Gallium Arsenide) of 100 um thickness, but the method is applicable to other substrates as well.


Coplanar waveguide-to-microstrip transition Electromagnetic simulation De-embedding Monolithic microwave integration circuits Momentum 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.



The authors would like to acknowledge Dr. R. Murlidharan, Director, Solid state Physics laboratory Delhi, for his encouragement to carry out this work and his kind permission for publication of this work.


  1. 1.
    H.T. Yen, T.J. Yeh and sally Liu, A physical de-embedding method for silicon-based devices applications, PIERS Online, Vol. 5, No.4, 2009.CrossRefGoogle Scholar
  2. 2.
    W.Wiatr, coplanar-waveguide-to-microstrip transition model, IEEE MTT-S Dig 2000, pp 1797-1800.Google Scholar
  3. 3.
    H.Y. Cho, J.K. Huang, C.W. Kuo, S.L.Liu and C.Y. Wu, A Novel Transmission-Line Deembedding Technique for RF Device Characterization, IEEE Transactions on Electron Device, Vol.56 No.12 Dec 2009.Google Scholar
  4. 4.
    D.M. Pozar, Microwave Engineering, 3rd ed. New York: Wiley.Google Scholar
  5. 5.
    Vandamme, E. P., M..-P. schreurs, and G. Van Dinther, ‘Improved three-step de-embedding method to accurately account for the influence of Pad parasitic in silicon on wafer RF test structure,’ IEEE Transactions on Electron Device, Vol.48 No.4, 737-742, April 2001.CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Solid State Physics LaboratoryDelhiIndia

Personalised recommendations