Electron Beam Lithography for Fabrication of Sub 250 nm T Gates for AlGaAs/InGaAs PHEMT Based MMICs

  • R. K. Khatri
  • S. S. Sarkar
  • A. Rudra
  • Mahadev Bhat
  • A. A. Naik
  • Ashok Kumar
  • B. K. Sehgal
  • R. Muralidharan
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

MMICs operating at 40 GHz and above require PHEMTs with T gates of dimensions 250 nm or less. We are presenting here a process to fabricate T gates using single step electron beam lithography process on a bilayer resist stack of PMMA and its methacrylic acid co-polymer P(MMA-MAA). Using this process we have fabricated T gates of dimensions up to 150 nm. One of the PHEMTs fabricated with 250 nm T gate have demonstrated cut off frequency of 53 GHz.

Keywords

T Gate PHEMT 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Notes

Acknowledgments

Authors are thankful to the Monolithic Microwave Integrated Circuit Fabrication Group of Solid State Physics Laboratory for fabricating the PHEMT device with 250 nm T gate whose RF measurement is presented in this work. Authors are also thankful to the Characterization Division of Solid State Physics Laboratory for carrying out the Scanning Electron Microscopy characterization of the samples.

References

  1. 1.
    P. M. Smith et al., “Pseudomorphic InGaAs HEMTs for millimeter wave power applications,” in IEEE MTT-S Dig., 929, (1988).Google Scholar
  2. 2.
    P. Saunier and H. Q. Tsemg, “AlGaAs/InGaAs heterostructures with doped channels for discrete devices and monolithic amplifiers,” IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2231-2235, 1989.CrossRefGoogle Scholar
  3. 3.
    K. L. Tan et al., “Ultralow-noise W-band pseudomorphic InGaAs HEMT’s,” IEEE Electron DeviceLett., vol. 11, no. 7, pp. 303-305, 1990.CrossRefGoogle Scholar
  4. 4.
    P. C. Chao et al., “Very low-noise Al0.3 Ga0.7As/Ga0.65In0.35As single quantum-well pseudomorphic InGaAs HEMTs,” Electron. Lett., vol. 26, no. 1, pp. 27-28, 1990.Google Scholar
  5. 5.
    M. Matsumura, K. Tsutsui, and Y. Naruke, Electron. Lett.,Vol. 12, 429 (1981).CrossRefGoogle Scholar
  6. 6.
    Chao, P.C., Smith, P.M., Palmateer, S.C., Hwang, J.C.M., IEEE Trans. Electron Devices, ED-32, 1042 (1985).CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • R. K. Khatri
    • 1
  • S. S. Sarkar
    • 1
  • A. Rudra
    • 1
  • Mahadev Bhat
    • 2
  • A. A. Naik
    • 1
  • Ashok Kumar
    • 1
  • B. K. Sehgal
    • 1
  • R. Muralidharan
    • 1
  1. 1.Solid State Physics LaboratoryDelhiIndia
  2. 2.Gallium Arsenide Enabling Technology CentreHyderabadIndia

Personalised recommendations