Design and Fabrication of GaN HEMT Based Power Amplifier

  • Sanjay Kumar TomarEmail author
  • Meena Mishra
  • Ashok Kumar
  • B. K. Sehgal
Part of the Environmental Science and Engineering book series (ESE)


This paper discusses the design and measurement of highly efficient GaN HEMT based power amplifier at L Band. Large signal parameters including PAE and power output are presented at an operating frequency of 1 GHz. High efficiency >82 % is achieved by terminating the harmonics at the input as well as at the output and a high output power of 5.2 W is achieved by impedance matching or tuning technique.


Power amplifier GaN HEMT Power added efficiency 


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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Sanjay Kumar Tomar
    • 1
    Email author
  • Meena Mishra
    • 1
  • Ashok Kumar
    • 1
  • B. K. Sehgal
    • 1
  1. 1.Solid State Physics LaboratoryDRDO, Ministry of DefenceDelhiIndia

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