Capacitance-Voltage Measurement of SiO2/GeOxNy Gate Stack on Surface Passivated Germanium

Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Germanium (Ge) based MOS transistors is possible alternative to silicon based MOS transistors due to high mobility of carriers in Ge. Extensive research is going on for fabrication of high mobility MOS devices worldwide. Here, we have studied the c-v characteristics of Ge based surface passivated MOS structure such as dielectric constant of gate stack, effective oxide charges, density of interface charges at semiconductor oxide interface etc. The interface trap density extracted from the C-V/G-V measurement showed the lowest interface trap density of 7.82 × 1011 cmeV−1. The minimum leakage current density for SiO2/GexONy gate dielectric stack is 1.35 × 10−7 A cm−2 at gate bias of 1 V.

Keywords

Germanium Passivation Sputtering SiO2 Dit 

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Notes

Acknowledgments

Authors are thankful to CEN, IITB for providing necessary fabrication and characterization facilities under INUP scheme. One of the authors, A. G. Khairnar is thankful to CSIR New Delhi, India for providing Senior Research Fellowship for carrying out this work [File No. 09/728(0029)/2012-EMR-I].

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of ElectronicsSchool of Physical Sciences, North Maharashtra UniversityJalgaonIndia

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